Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
PHEMT |
1 |
17 dBm |
350 mA |
COMPONENT |
3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
50000 MHz |
95000 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.5 |
35 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
3000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.4 |
35 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.4 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
3000 MHz |
|||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
10 MHz |
1100 MHz |
||||||||
|
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
28 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
3300 MHz |
3800 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
TIN LEAD |
e0 |
6500 MHz |
13500 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
20000 MHz |
|||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
NARROW BAND LOW POWER |
||||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
20000 MHz |
|||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Matte Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
71 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
2300 MHz |
4000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
1.9 |
COMPONENT |
3.9 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-45 Cel |
0 MHz |
8000 MHz |
||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
|||||||||||||||||||||||||
Rf Micro Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.2 |
39 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19.5 dB |
-40 Cel |
LOW NOISE |
0 MHz |
5000 MHz |
|||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
40 dBm |
COMPONENT |
50 ohm |
85 Cel |
15.9 dB |
-40 Cel |
2000 MHz |
22000 MHz |
|||||||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
23 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
50 MHz |
4000 MHz |
||||||
|
Qorvo |
WIDE BAND HIGH POWER |
30 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
50 MHz |
1500 MHz |
||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
25 dBm |
COMPONENT |
85 Cel |
15.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
5600 MHz |
7100 MHz |
||||||||||||||||
|
M/a-com Technology Solutions |
NARROW BAND MEDIUM POWER |
23 dBm |
COMPONENT |
16.5 dB |
Matte Tin (Sn) |
IT CAN ALSO OPERATE AT 4900 TO 5900 MHZ |
e3 |
3500 MHz |
6000 MHz |
|||||||||||||||||
|
Analog Devices |
||||||||||||||||||||||||||
|
Analog Devices |
||||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
PHEMT |
1 |
17 dBm |
350 mA |
COMPONENT |
3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
50000 MHz |
95000 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
10 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
2000 MHz |
18000 MHz |
|||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
2.1 |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
9.2 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
||||||||||
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
20 dBm |
2.1 |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.2 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
100 MHz |
6000 MHz |
||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
2.1 |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
9.2 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
COMPONENT |
3 |
LCC8,.08SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.5 dB |
-40 Cel |
MATTE TIN |
e3 |
800 MHz |
4000 MHz |
|||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
40 dBm |
COMPONENT |
50 ohm |
85 Cel |
15.7 dB |
-40 Cel |
2000 MHz |
22000 MHz |
|||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.6 |
COMPONENT |
3.5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
15.5 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
2500 MHz |
|||||||||
|
Triquint Semiconductor |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
1 |
16 dBm |
390 mA |
COMPONENT |
11 |
LCC28,.24SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
30 MHz |
2200 MHz |
|||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
15 mA |
3 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
300 MHz |
3000 MHz |
||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
MATTE TIN OVER NICKEL |
e3 |
3100 MHz |
3900 MHz |
|||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
7 |
440 mA |
COMPONENT |
10 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
22000 MHz |
|||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
1 |
24 dBm |
1.67 |
75 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
30 MHz |
8000 MHz |
||||||||||
Broadcom |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
51 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE, HIGH RELIABILITY |
e3 |
100 MHz |
6000 MHz |
||||
|
Qorvo |
WIDE BAND LOW POWER |
16 dBm |
COMPONENT |
50 ohm |
105 Cel |
15.6 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
4500 MHz |
|||||||||||||||
Mitsubishi Electric |
NARROW BAND HIGH POWER |
20 dBm |
3 |
MODULE |
50 ohm |
110 Cel |
-30 Cel |
154 MHz |
162 MHz |
||||||||||||||||||
|
Mitsubishi Electric |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
MODULE |
5,12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
-30 Cel |
154 MHz |
162 MHz |
|||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
24 dBm |
COMPONENT |
50 ohm |
85 Cel |
35 dB |
-40 Cel |
500 MHz |
2700 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.