RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
GALI-2+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	15 dBm	2.6		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-45 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	8000 MHz
GALI-2	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	15 dBm	2.6		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	8000 MHz
GALI-21+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	15 dBm	2.5		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11.5 dB	-45 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	8000 MHz
GALI-21	Mini-circuits	WIDE BAND LOW POWER						15 dBm	2.5		COMPONENT			50 ohm		85 Cel	11.5 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	8000 MHz
GRF2013	Guerrilla Rf	WIDE BAND MEDIUM POWER						22 dBm	2		COMPONENT			50 ohm		105 Cel	17.5 dB	-40 Cel				50 MHz	8000 MHz
HMC-AUH312	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	5		GAAS	1	10 dBm		65 mA	COMPONENT	8	DIE OR CHIP	50 ohm		85 Cel	10 dB	-55 Cel				500 MHz	80000 MHz
HMC-AUH312-SX	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	8 dB	-55 Cel				500 MHz	80000 MHz
HMC374ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	15 dBm			COMPONENT	5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	6 dB	-40 Cel				300 MHz	3000 MHz
HMC429LP4E	Analog Devices	NARROW BAND LOW POWER							2		COMPONENT			50 ohm		85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	4450 MHz	5000 MHz
HMC462	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3		PHEMT	1	18 dBm	1.25	84 mA	COMPONENT	5	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-55 Cel	GOLD		e4	2000 MHz	20000 MHz
HMC462LP5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	18 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	2000 MHz	20000 MHz
HMC636ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	16 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	200 MHz	4000 MHz
MAAM-011112-000000	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	0 dBm		400 mA	COMPONENT	4	LCC16,.12SQ,20	50 ohm		85 Cel	21 dB	-40 Cel	MATTE TIN		e3	20000 MHz	37000 MHz
MAX2235EUP-T	Maxim Integrated	WIDE BAND MEDIUM POWER						13 dBm	1.5		COMPONENT			50 ohm		85 Cel	24 dB	-40 Cel	TIN LEAD		e0	800 MHz	1000 MHz
MAX2235EUP+T	Analog Devices	WIDE BAND MEDIUM POWER						13 dBm	1.5		COMPONENT			50 ohm		85 Cel	24 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	800 MHz	1000 MHz
MAX2642EXT-T	Maxim Integrated	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	14.5 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2642EXT+T	Analog Devices	WIDE BAND LOW POWER						5 dBm						50 ohm		85 Cel	14.5 dB	-40 Cel	NICKEL GOLD PALLADIUM	LOW NOISE		800 MHz	1000 MHz
MAX2839ETN+	Maxim Integrated	NARROW BAND LOW POWER																	MATTE TIN		e3
MAX2839ETN+T	Maxim Integrated	NARROW BAND LOW POWER																	MATTE TIN		e3
MAX2839ETN+TD	Maxim Integrated	NARROW BAND LOW POWER						15 dBm			COMPONENT			50 ohm		85 Cel		-40 Cel		LOW NOISE		2300 MHz	2700 MHz
MD8IC925GNR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY		2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				TIN		e3
MGA-13516-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	20 dBm		140 mA	COMPONENT	5	LCC16,.16SQ,25		RF/Microwave Amplifiers		30.2 dB		Matte Tin (Sn)		e3	400 MHz	1500 MHz
MGA-13516-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	20 dBm		140 mA	COMPONENT	5	LCC16,.16SQ,25		RF/Microwave Amplifiers		30.2 dB		Matte Tin (Sn)		e3	400 MHz	1500 MHz
MGA-13516-TR2G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	20 dBm		140 mA	COMPONENT	5	LCC16,.16SQ,25		RF/Microwave Amplifiers		30.2 dB		Matte Tin (Sn)		e3	400 MHz	1500 MHz
MGA-31689-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	15 dBm		195 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		16.6 dB		Tin (Sn)	LOW NOISE	e3	1500 MHz	3000 MHz
MGA-31689-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	15 dBm		195 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		16.6 dB		Tin (Sn)	LOW NOISE	e3	1500 MHz	3000 MHz
MGA-85563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.3	20 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	6000 MHz
MGA-86576-STR	Broadcom	WIDE BAND LOW POWER						13 dBm	2.5		COMPONENT			50 ohm			20 dB		Tin/Lead (Sn/Pb)		e0	1500 MHz	8000 MHz
MGA-86576-STRG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	13 dBm	2.5	22 mA	COMPONENT	5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)		e3	1500 MHz	8000 MHz
MGA-86576-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS		13 dBm	2.5	22 mA	COMPONENT	5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		20 dB					1500 MHz	8000 MHz
MSA-3111-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	500 MHz
MSA-3111-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MSA-3111-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.2	40 mA	COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	23.5 dB	-25 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	500 MHz
MSA-3111-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MSA-3111-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.2		COMPONENT	4.5	TO-253	50 ohm	RF/Microwave Amplifiers		23.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
MW7IC2040NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	25 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		29.5 dB		TIN		e3	1805 MHz	1990 MHz
NPA1003QAR	M/a-com Technology Solutions		SURFACE MOUNT	16	PLASTIC/EPOXY		1					28	LCC16,.16SQ,25		RF/Microwave Amplifiers
QPA1011	Qorvo	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm		85 Cel	28 dB	-40 Cel		HIGH RELIABILITY		7900 MHz	11000 MHz
QPA1011D	Qorvo	WIDE BAND HIGH POWER
QPA2966D	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	8		GAN	1	37 dBm	3		COMPONENT	22	DIE OR CHIP	50 ohm		85 Cel	18.4 dB	-40 Cel				2000 MHz	20000 MHz
QPA9426TR13	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY		1	10 dBm	10	900 mA	COMPONENT	4.5	SOLCC14,.28,42	50 ohm		85 Cel	30.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	2700 MHz
QPA9908TR13	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	10 dBm	1.22		COMPONENT	5	LCC16,.2SQ,32	50 ohm			30 dB					850 MHz	960 MHz
RA07N4047M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	14.77 dBm	4		MODULE	3.5,9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel		-30 Cel				400 MHz	470 MHz
RA18H1213G-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	24.77 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel	23 dB	-30 Cel				1240 MHz	1300 MHz
RDA1005LTR13	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
RDA1005LTR7	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	20 dBm			COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				50 MHz	4000 MHz
RF2172TR7	Rf Micro Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1					3.6	LCC16,.16SQ,32		RF/Microwave Amplifiers
RFPA2189	Qorvo	WIDE BAND MEDIUM POWER									COMPONENT						19.5 dB					400 MHz	2700 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.