RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
ADL8121ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6		PHEMT		1	32 dBm	1.43		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	15 dB	-40 Cel				25 MHz	12000 MHz
AFD4-020040-20P	L-3 Narda-miteq	WIDE BAND MEDIUM POWER								2		COAXIAL						32 dB			SMA-F		2000 MHz	4000 MHz
AFSX3-00100200-15-10P	L-3 Narda-miteq	WIDE BAND LOW POWER								2		COAXIAL						36 dB			LOW NOISE		100 MHz	2000 MHz
AMMC-6442-W50	Broadcom	WIDE BAND MEDIUM POWER						1	20 dBm			COMPONENT	5	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers		20 dB					37000 MHz	40000 MHz
CA30063	Harris Semiconductor			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
CA3006/3	Rca Solid State			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
CMD245C4	Qorvo	WIDE BAND LOW POWER							17 dBm			COMPONENT			50 ohm		85 Cel	14 dB	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	IT CAN ALSO OPERATE AT 5000 TO 20000 MHZ	e4	6000 MHz	18000 MHz
CMPA5259050F	Wolfspeed	WIDE BAND HIGH POWER	SURFACE MOUNT	6	CERAMIC	PHEMT		1		3	1000 mA	COMPONENT	28		50 ohm		105 Cel	31 dB	-40 Cel				5200 MHz	5900 MHz
CMPA801B030F1	Wolfspeed	WIDE BAND HIGH POWER
HMC388LP4TR	Analog Devices	NARROW BAND LOW POWER								2		COMPONENT			50 ohm		85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	3150 MHz	3400 MHz
HMC465LP5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		1					8	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC618LP3ETR	Hittite Microwave	NARROW BAND LOW POWER
HMC716LP3ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	1.38	90 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	MATTE TIN		e3	3100 MHz	3900 MHz
HMC788LP2E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	5	SOLCC6,.08,25	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	10000 MHz
HMC788LP2ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1					5	SOLCC6,.08,25		RF/Microwave Amplifiers	85 Cel		-40 Cel
LHA-83W+	Mini-circuits	WIDE BAND LOW POWER																		Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier		e2
MAAL-011129-TR3000	M/a-com Technology Solutions	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel	Matte Tin (Sn)		e3	18000 MHz	31500 MHz
MAAM28000-A1G	TE Connectivity		SURFACE MOUNT	8	CERAMIC	GAAS					100 mA		10	SOP8(UNSPEC)		RF/Microwave Amplifiers	100 Cel		-55 Cel
MAX2634AXT/V+T	Analog Devices	WIDE BAND LOW POWER																		NICKEL GOLD PALLADIUM
MD7IC2050NBR1	NXP Semiconductors	NARROW BAND HIGH POWER							28 dBm	5		MODULE			50 ohm			28.5 dB		Matte Tin (Sn)	USABLE AT 1750 TO 2050 MHZ	e3	1880 MHz	2100 MHz
MD7IC2755NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		2	30 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		23 dB		TIN		e3	2500 MHz	2700 MHz
MD8IC925NR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				TIN		e3
MGA-565P8-TR1G	Agilent Technologies	WIDE BAND LOW POWER							15 dBm	2		COMPONENT						20 dB						3500 MHz
MGA-83563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	13 dBm	4.5	200 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		17 dB		Matte Tin (Sn)		e3	500 MHz	6000 MHz
MMG3001NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	1.17	300 mA	COMPONENT	5.6	TO-243	50 ohm			18 dB					40 MHz	3600 MHz
MW7IC2725GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
MW7IC2725NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
PGA-105+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	23 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel				40 MHz	2600 MHz
QPA9501TR13	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY			1	5 dBm		650 mA	COMPONENT	5	LCC20,.16SQ,20	50 ohm		105 Cel	29.5 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	4900 MHz	5900 MHz
SBB3089ZSQ	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	20 dBm		46 mA	COMPONENT	4.2	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.9 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	50 MHz	6000 MHz
SGA-6286Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel				0 MHz	5500 MHz
SGA2486Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		23 mA	COMPONENT	2.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	17.8 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA6286Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5500 MHz
SKY66298-11	Skyworks Solutions	NARROW BAND HIGH POWER
SPF-5189Z	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	27 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11.3 dB	-40 Cel				50 MHz	4000 MHz
TGA2578	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	10		GAN		1	25 dBm	10	400 mA	COMPONENT	-2.8,28	DIE OR CHIP	50 ohm		275 Cel	27 dB					2000 MHz	6000 MHz
TQL9047	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1					5	SOLCC8,.08,20		RF/Microwave Amplifiers
TQP3M9007	Qorvo	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			50 ohm		85 Cel	11.5 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	100 MHz	4000 MHz
UPC8179TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.4 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
XP1050-QJ-0G00	M/a-com Technology Solutions	WIDE BAND HIGH POWER							25 dBm			COMPONENT					85 Cel	15 dB	-40 Cel	Matte Tin (Sn)		e3	7000 MHz	9000 MHz
BGA231N7E6327XTSA2	Infineon Technologies	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	Tin (Sn)		e3	1550 MHz	1615 MHz
BGU7005	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	TIN	LOW NOISE	e3	1713 MHz	1851 MHz
BGU7005/Z/N2115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	0 dBm	1.22	14.4 mA	COMPONENT	1.8	SOLCC6,.04,20	50 ohm		85 Cel	14 dB	-40 Cel				1559 MHz	1610 MHz
CMD192C5	Qorvo	WIDE BAND LOW POWER							23 dBm			COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	LOW NOISE	e4	0 MHz	20000 MHz
CMPA1D1E025F	Wolfspeed	NARROW BAND MEDIUM POWER
MAX2371ETC+T	Analog Devices		SURFACE MOUNT	12	PLASTIC/EPOXY			1			5.5 mA		2.7	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
MMZ25333BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER																		TIN		e3
BGA2817,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			22.2 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.