NXP Semiconductors - MD8IC925NR1

WIDE BAND MEDIUM POWER; JESD-609 Code: e3; Gain: 23 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

Broadcom's MGA-23003-BLKG is a RF & Microwave Amplifier with 32 dB Gain, operating b/w 3300-3800 MHz. It has a Max Input Power of 15 dBm and operates on a 3.3V power supply. Ideal for narrowband medium power applications due to its GaAs technology and surface mounting feature.

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.

Qorvo's QPA1019 is a wide band high power RF amplifier with 30 dB gain, handling up to 28 dBm CW input power. Operating from 4.5 GHz to 7 GHz, it's ideal for applications requiring robust amplification in RF & microwave systems. With gold terminal finish and operating temperatures from -40°C to 85°C, it ensures reliable performance in various environments.

Analog Devices' HMC5805ALS6TR is a wide band low power RF amplifier with 9 dB gain and 22 dBm max input power. Operating from -40 to 85°C, it covers frequencies up to 40 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

SGA-6286Z by Sirenza Microdevices is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in the RF & Microwave field.

Qorvo's RF6886SR is a wide band high power amplifier with 31 dB gain, operating from 433 MHz to 470 MHz. It has a max input power of 12 dBm and VSWR of 5, suitable for RF & microwave applications requiring high power amplification in plastic/epoxy package.

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.

Qorvo's RF3827 is a wide band medium power amplifier with 20dB gain, operating from 5MHz to 1500MHz. It has a max input power of 13dBm and VSWR of 20, suitable for RF applications requiring up to 8V supply voltage. The component is constructed using GaAs technology in a plastic/epoxy package, ideal for surface mounting in various RF and microwave systems.

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.

WIDE BAND LOW POWER;

ADA-4643-BLKG by Broadcom is a wide band low power RF amplifier with 15.5 dB gain, operating from 0-2500 MHz. It features a max input power of 18 dBm and VSWR of 1.6, suitable for RF & microwave applications requiring high performance in plastic/epoxy package.

Mini-circuits LEE-39 is a wide band low power RF amplifier with 18.5 dB gain, handling up to 13 dBm CW input power. Featuring a VSWR of 1.6, it operates from -40°C to 85°C, making it ideal for various RF and microwave applications up to 8 GHz.

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10.5 dB;

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.

TRF37A75IDSGT by Texas Instruments is a wide band low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 40 MHz to 6 GHz, handling up to 10 dBm CW input power. Ideal for applications requiring surface mount components in RF and microwave systems.

Qorvo's TQP369184 is a wide band low power RF amplifier with 18.8 dB gain and 24 dBm max input power. Operating from -40 to 105°C, it covers frequencies from 0 to 6000 MHz, making it ideal for various RF and microwave applications.