Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Motorola |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
5 dBm |
2 |
340 mA |
MODULE |
24 |
SOT-115J |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
33.5 dB |
-20 Cel |
LOW NOISE |
1 MHz |
250 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PANEL MOUNT |
7 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
6.25 dBm |
340 mA |
MODULE |
24 |
75 ohm |
100 Cel |
34.5 dB |
-20 Cel |
40 MHz |
550 MHz |
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Motorola |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
0 dBm |
2 |
MODULE |
7.5 |
MOT CASE 301J-02 |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
-30 Cel |
403 MHz |
440 MHz |
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Motorola |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24 dBm |
2 |
7140 mA |
MODULE |
12.5 |
MOT CASE 301G-03 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
19 dB |
-40 Cel |
806 MHz |
890 MHz |
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Motorola |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
22 dBm |
2 |
26 |
MOT CASE 301AB-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
27 dB |
-10 Cel |
925 MHz |
960 MHz |
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|
Freescale Semiconductor |
NARROW BAND MEDIUM POWER |
11 dBm |
2 |
COMPONENT |
50 ohm |
70 Cel |
-20 Cel |
IT CAN ALSO OPERATE AT 869 TO 894 MHZ |
824 MHz |
849 MHz |
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|
Freescale Semiconductor |
NARROW BAND MEDIUM POWER |
11 dBm |
16 |
COMPONENT |
50 ohm |
85 Cel |
-20 Cel |
IT CAN ALSO OPERATE AT 880 TO 915 MHZ, 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ |
824 MHz |
849 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.9 |
40 mA |
COMPONENT |
7.8 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
20.5 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
1000 MHz |
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Motorola |
WIDE BAND LOW POWER |
3 |
METAL |
HYBRID |
-20 dBm |
3 |
55 mA |
MODULE |
CAN3/4,.2 |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
7 dB |
-25 Cel |
Tin/Lead (Sn/Pb) |
e0 |
.1 MHz |
1000 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24.77 dBm |
2 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.4 dB |
-30 Cel |
154 MHz |
162 MHz |
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|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
1 |
15 dBm |
300 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
.25 MHz |
2500 MHz |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
COMPONENT |
3.5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
7000 MHz |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
2 |
COMPONENT |
4.7 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
2 |
COMPONENT |
4.7 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-45 Cel |
6000 MHz |
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|
Skyworks Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
1300 mA |
COMPONENT |
3.6 |
LCC12,.32SQ,75/64 |
50 ohm |
85 Cel |
35 dB |
-40 Cel |
Gold (Au) |
HIGH RELIABILITY |
e4 |
390 MHz |
500 MHz |
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|
Skyworks Solutions |
WIDE BAND MEDIUM POWER |
COMPONENT |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
Gold (Au) |
HIGH RELIABILITY |
e4 |
100 MHz |
1000 MHz |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
COMPONENT |
15 dB |
2400 MHz |
2500 MHz |
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|
Skyworks Solutions |
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|
Skyworks Solutions |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
BICMOS |
1 |
10 dBm |
1.92 |
4.5 mA |
COMPONENT |
1.8/2.85 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
1559 MHz |
1606 MHz |
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|
Skyworks Solutions |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
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|
Skyworks Solutions |
NARROW BAND LOW POWER |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
18000 MHz |
44000 MHz |
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M/a-com Technology Solutions |
WIDE BAND LOW POWER |
15 dBm |
2.1 |
COAXIAL |
50 ohm |
50 Cel |
16 dB |
0 Cel |
SMA, HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM |
10 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-55 Cel |
Gold (Au) |
e4 |
24000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-55 Cel |
Gold (Au) |
LOW NOISE |
e4 |
18000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
6 dBm |
COMPONENT |
50 ohm |
16 dB |
16000 MHz |
33000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
18 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
27000 MHz |
32000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
18 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
27000 MHz |
32000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
35000 MHz |
70000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-55 Cel |
GOLD |
e4 |
5000 MHz |
20000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
TIN LEAD |
e0 |
5000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
2000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
42 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
8 dBm |
95 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.2 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
18000 MHz |
31000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
27000 MHz |
31500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
MATTE TIN |
e3 |
1200 MHz |
2200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
120 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
MATTE TIN |
e3 |
200 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
0 Cel |
TUNGSTEN NICKEL GOLD |
0 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
LOW NOISE |
e4 |
10000 MHz |
20000 MHz |
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|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
8 |
LCC24,.2SQ,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
60 mA |
COMPONENT |
7.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
10 MHz |
28000 MHz |
||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
1 |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
26500 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
e4 |
600 MHz |
20000 MHz |
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|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.