RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
ADA-4543	Broadcom	WIDE BAND LOW POWER
AFIC10275NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
ALM-32320-TR1G	Broadcom	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS		1	28 dBm		910 mA	COMPONENT	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		11.2 dB					3300 MHz	3900 MHz
ALM-80210-BLKG	Broadcom	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm			8.2 dB					1600 MHz	2700 MHz
AMMC-6220-W10	Broadcom	WIDE BAND LOW POWER				HYBRID		1	15 dBm		70 mA	COMPONENT	3	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers		21 dB					6000 MHz	20000 MHz
AWB7229P8	Skyworks Solutions
BGA2800	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	18.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGU8L1X	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	6.6 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	12.5 dB	-40 Cel				728 MHz	960 MHz
ISL55012IEZ-T7	Renesas Electronics	WIDE BAND LOW POWER																		MATTE TIN		e3
ISL55015IEZ-T7	Renesas Electronics																			MATTE TIN		e3
MGA-22003-BLKG	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel				2300 MHz	2700 MHz
MGA-545P8-TR2	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS		1	20 dBm			COMPONENT	3.3	LCC10,.08SQ,20	50 ohm	RF/Microwave Amplifiers		10.5 dB		Matte Tin (Sn)		e3	50 MHz	7000 MHz
MHW806A4	Motorola	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			12.5 dBm	30	2400 mA	COMPONENT	12.5	MOT CASE 301H-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				870 MHz	950 MHz
SKY65900-11	Skyworks Solutions	NARROW BAND HIGH POWER																		TIN
SKY66295-21	Skyworks Solutions	WIDE BAND HIGH POWER
SKY67107-306LF	Skyworks Solutions	NARROW BAND LOW POWER							15 dBm			COMPONENT					85 Cel	29 dB	-40 Cel				2300 MHz	2800 MHz
SKY67150-396LF	Skyworks Solutions	WIDE BAND LOW POWER
SKY67159-396LF	Skyworks Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	8				1	21 dBm		100 mA	COMPONENT	3.3	SOLCC8,.08,20	50 ohm		105 Cel	16.5 dB	-40 Cel		LOW NOISE		200 MHz	3800 MHz
VMMK-2203-BLKG	Broadcom	WIDE BAND LOW POWER				GAAS		1	13 dBm		30 mA	COMPONENT	5	WAFER	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	11000 MHz
VMMK-2503-BLKG	Broadcom	WIDE BAND LOW POWER				GAAS		1	20 dBm		88 mA	COMPONENT	5	WAFER	50 ohm	RF/Microwave Amplifiers		12.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	12000 MHz
ABA-32563	Broadcom	WIDE BAND LOW POWER							15 dBm	2		COMPONENT			50 ohm			17.5 dB					0 MHz	2500 MHz
ABA-51563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.2	28 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3500 MHz
ABA-54563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.2	90 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3400 MHz
AC573	Teledyne Technologies	WIDE BAND LOW POWER							6 dBm	1.9		COMPONENT			50 ohm		85 Cel	29 dB	-55 Cel		I/P POWER-MAX (PEAK)=27DBM		5 MHz	500 MHz
ALM-GA002-TR1G	Broadcom	WIDE BAND LOW POWER
AMMC-5024	Broadcom	WIDE BAND LOW POWER							17 dBm			COMPONENT			50 ohm			14 dB					.03 MHz	40000 MHz
AMMC-6222-W10	Broadcom	NARROW BAND MEDIUM POWER						1	10 dBm		160 mA	COAXIAL	4	DIE OR CHIP		RF/Microwave Amplifiers		20 dB					7000 MHz	21000 MHz
AMMC-6241-W50	Broadcom	WIDE BAND LOW POWER						1	15 dBm		80 mA	COMPONENT	3	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers		18.5 dB					26000 MHz	43000 MHz
AMMP-6130-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	15 dBm		250 mA	COMPONENT	4.5	LCC8,.2SQ,28	50 ohm	RF/Microwave Frequency Multipliers		14 dB		Nickel/Gold (Ni/Au)		e4		30000 MHz
AWL6153M7UP8	Ii-vi	NARROW BAND MEDIUM POWER							10 dBm	10		COMPONENT			50 ohm		85 Cel	28.5 dB	-40 Cel				2400 MHz	2485 MHz
AWT6283RM49P8	Skyworks Solutions	NARROW BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	HYBRID		1		10	170 mA	COMPONENT	3.3	SOLCC10,.16,34	50 ohm		85 Cel	31 dB	-40 Cel				3300 MHz	3800 MHz
CA2830C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-20 Cel				5 MHz	200 MHz
FMM5010VF	Fujitsu	NARROW BAND LOW POWER			CERAMIC	GAAS			5 dBm	2.3		COMPONENT	10,-5	FLNG,.53"H.SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel		HIGH RELIABILITY		14000 MHz	14500 MHz
HMC1022	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			GAAS		1	20 dBm	7		COMPONENT	10	DIE OR CHIP	50 ohm		85 Cel	12 dB	-55 Cel	Gold (Au)		e4		48000 MHz
LM703LN	National Semiconductor		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR								DIP8,.3		RF/Microwave Amplifiers	70 Cel		0 Cel	Tin/Lead (Sn/Pb)		e0
MGA-13316-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			138 mA		5	LCC16,.16SQ,25		RF/Microwave Amplifiers				Tin (Sn)		e3
MGA-31389-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	20 dBm		90 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)	LOW NOISE	e3	50 MHz	2000 MHz
MGA-633P8-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	20 dBm		67 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Tin (Sn)		e3	450 MHz	2000 MHz
MGA-634P8-BLKG	Broadcom	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		61 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.1 dB	-40 Cel	Tin (Sn)		e3	1500 MHz	2300 MHz
MGA-71543-BLKG	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS		1	10 dBm		50 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers		14.4 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
MGA-82563-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS			13 dBm	1.2	101 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE, HIGH RELIABILITY	e0	100 MHz	6000 MHz
MGA-86563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	13 dBm	1.7		COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.7 dB	-40 Cel	Matte Tin (Sn)		e3	500 MHz	6000 MHz
MHL19926	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	17 dBm	1.5	1050 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	28.4 dB	-20 Cel				1930 MHz	1990 MHz
MHL21336	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	GAAS			5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
MHL9128	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	1.5	440 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				800 MHz	960 MHz
MHL9838N	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID		1	6 dBm	1.5	800 mA	COMPONENT	28	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	925 MHz
MHW2821-2	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	3	500 mA	COMPONENT	12.5	MOT CASE 301AB-02	50 ohm	RF/Microwave Amplifiers	100 Cel	17.9 dB	-30 Cel				890 MHz	950 MHz
MHW5185	Motorola	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID					435 mA		24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				40 MHz	450 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.