Ii-vi - AWL6153M7UP8

  1. Home
  2. Ii-vi - AWL6153M7UP8
AWL6153M7UP8 by Ii-vi

Image shown is a representation only.

Manufacturer Ii-vi
Manufacturer's Part Number AWL6153M7UP8
Description NARROW BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 10; Gain: 28.5 dB; Maximum Input Power (CW): 10 dBm; Maximum Operating Frequency: 2485 MHz; Minimum Operating Frequency: 2400 MHz;
Datasheet AWL6153M7UP8 Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 10
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 2400 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2485 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Minimum Operating Temperature: -40 Cel
Gain: 28.5 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ABA-54563-BLKG by Agilent Technologies

ABA-54563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 0 MHz;
BGA2003T/R by NXP Semiconductors

BGA2003T/R

NXP Semiconductors

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.
MAX2643EXT+T by Maxim Integrated

MAX2643EXT+T

Maxim Integrated

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;
MMG20241HT1 by NXP Semiconductors

MMG20241HT1

NXP Semiconductors

The NXP Semiconductors MMG20241HT1 is a GAAS RF amplifier with 18.4 dB gain, operating from 450 MHz to 3800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems. The component is surface-mountable with matte tin terminals and a characteristic impedance of 50 ohms.
MGA-61563-BLKG by Agilent Technologies

MGA-61563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;
HMC608LC4TR by Hittite Microwave

HMC608LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
SST13LP05-MLCF by Silicon Storage Technology

SST13LP05-MLCF

Silicon Storage Technology

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; No. of Functions: 2;
CMPA901A035F by Wolfspeed

CMPA901A035F

Wolfspeed

WIDE BAND HIGH POWER;
BGA2817,115 by NXP Semiconductors

BGA2817,115

NXP Semiconductors

NXP Semiconductors' BGA2817,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and max operating temp of 85°C. It features surface mounting and tin terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
XB1007-QT-0G00 by M/a-com Technology Solutions

XB1007-QT-0G00

M/a-com Technology Solutions

XB1007-QT-0G00 by M/a-com is a GAAS technology RF amplifier with 23 dB gain, operating from 4-11 GHz. It has a max input power of 20 dBm and operates b/w -55 to 85°C. Ideal for wideband medium power applications requiring surface mounting features.
SGA-3363Z by Sirenza Microdevices

SGA-3363Z

Sirenza Microdevices

SGA-3363Z by Sirenza Microdevices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates on a 2.6V supply, making it suitable for various RF and microwave applications requiring high performance in plastic/epoxy package.
HMC816LP4ETR by Hittite Microwave

HMC816LP4ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
BGB719N7ESDE6327XTMA1 by Infineon Technologies

BGB719N7ESDE6327XTMA1

Infineon Technologies

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.
HMC3653LP3BETR by Analog Devices

HMC3653LP3BETR

Analog Devices

Analog Devices' HMC3653LP3BETR is a wide band low power RF amplifier with 12 terminals, operating from 7-15 GHz. It has a supply voltage of 5V and consumes up to 55mA current. Suitable for RF & microwave applications, it offers bipolar technology in a surface mount package.
HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.
MAAM28000-A1G by TE Connectivity

MAAM28000-A1G

TE Connectivity

MAAM28000-A1G by TE Connectivity is a GAAS RF amplifier with 10V power supply, 8 terminals, and max operating temp of 100°C. Its ceramic package body material and surface mounting feature make it ideal for high-frequency applications in telecommunications and radar systems.
HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.
SPF5122ZSR by Qorvo

SPF5122ZSR

Qorvo

Qorvo's SPF5122ZSR is a GAAS RF amplifier with 11.2 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 27 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, it features a surface-mount package with matte tin terminals.
HMC465LP5E by Analog Devices

HMC465LP5E

Analog Devices

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.