Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
United Monolithic Semiconductor Sas |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
85 Cel |
19 dB |
-40 Cel |
5800 MHz |
17000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.5 dB |
-40 Cel |
MATTE TIN |
e3 |
700 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
8 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
LOW NOISE |
200 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
MATTE TIN |
e3 |
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|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
0 dBm |
400 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
21 dB |
-40 Cel |
20000 MHz |
37000 MHz |
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Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
1.25 |
COMPONENT |
3 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
800 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
1.25 |
11 mA |
COMPONENT |
3 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
800 MHz |
1000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
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Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
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Agilent Technologies |
SURFACE MOUNT |
4 |
METAL |
GAAS |
22 mA |
5 |
SL,4LEAD,.07SQ |
RF/Microwave Amplifiers |
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|
NXP Semiconductors |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
138 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
MATTE TIN |
e3 |
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|
NXP Semiconductors |
NARROW BAND MEDIUM POWER |
29 dBm |
COMPONENT |
50 ohm |
28.7 dB |
130 MHz |
1000 MHz |
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|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
HEMT |
1 |
10 |
COMPONENT |
28 |
LCC16,.16SQ,20 |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
20 MHz |
1500 MHz |
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|
Mini-circuits |
WIDE BAND MEDIUM POWER |
19 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.2 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
30 MHz |
2700 MHz |
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|
Mitsubishi Electric |
NARROW BAND HIGH POWER |
THROUGH HOLE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
14.77 dBm |
4 |
MODULE |
12.5 |
MODULE,4LEAD,.74 |
50 ohm |
90 Cel |
25.22 dB |
-30 Cel |
400 MHz |
470 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
COMPONENT |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
17.5 dB |
50 MHz |
4000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
50 MHz |
4000 MHz |
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|
Onsemi |
WIDE BAND LOW POWER |
TIN BISMUTH |
e6 |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
31 dBm |
COMPONENT |
50 ohm |
16 dB |
LOW NOISE |
0 MHz |
4000 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
HIGH RELIABILITY |
500 MHz |
1000 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
1.67 |
29 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
85 Cel |
33 dB |
-40 Cel |
1000 MHz |
||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
GAAS |
1 |
20 dBm |
88 mA |
COMPONENT |
5 |
WAFER |
50 ohm |
RF/Microwave Amplifiers |
12.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1000 MHz |
12000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
1.38 |
COMPONENT |
2 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
24.5 dB |
-40 Cel |
23000 MHz |
31000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
13 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
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M/a-com Technology Solutions |
WIDE BAND LOW POWER |
13 dBm |
2.1 |
COAXIAL |
50 ohm |
50 Cel |
7 dB |
0 Cel |
SMA, LOW NOISE, HIGH RELIABILITY |
10 MHz |
250 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
5 dBm |
85 mA |
COMPONENT |
2.5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
24000 MHz |
43500 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
10 MHz |
1100 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
e3 |
5000 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
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Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
2 |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
6800 MHz |
7400 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
200 MHz |
2000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
7.8 mA |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
125 Cel |
12.8 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
300 MHz |
1500 MHz |
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Maxim Integrated |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
800 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
800 MHz |
1000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.7 |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAN |
1 |
21 dBm |
3 |
COMPONENT |
LCC24,.2SQ,25 |
50 ohm |
35.5 dB |
8000 MHz |
12000 MHz |
||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
46 mA |
COMPONENT |
4.2 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.9 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
50 MHz |
6000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
46 mA |
COMPONENT |
4.2 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.9 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
50 MHz |
6000 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
E-PHEMT |
1 |
22 dBm |
2.01 |
100 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
17.5 dB |
-40 Cel |
500 MHz |
4000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
14 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
14 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
||||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.5 |
COMPONENT |
3.8 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
2500 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
32 dBm |
1.43 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
25 MHz |
12000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.