RF/Microwave Mixers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Conversion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC129ALC4	Analog Devices	DOUBLE BALANCED					25 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm		85 Cel	-40 Cel		9 dB			4000 MHz	8000 MHz
HMC1042LC4	Analog Devices	IMAGE REJECTION					18 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Gold Flash (Au) - with Nickel (Ni) barrier	14 dB			15000 MHz	33500 MHz
HMC1048ALC3BTR-R5	Analog Devices	DOUBLE BALANCED					16 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel		14 dB			2250 MHz	18000 MHz
LTC5566IUH#TRPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	32	PLASTIC/EPOXY	CMOS	20 dBm	1.92	450 mA	COMPONENT	3.3	LCC32,.2SQ,20	300 ohm		105 Cel	-40 Cel	MATTE TIN			e3	300 MHz	6000 MHz
HMC711LC5TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	32	CERAMIC	GAAS					5	LCC32,.2SQ,20		RF/Microwave Up/Down Converters	85 Cel	-40 Cel
HMC774	Analog Devices	DOUBLE BALANCED					21 dBm			COMPONENT			50 ohm		85 Cel	-55 Cel		13 dB			7000 MHz	43000 MHz
LTC5540IUH#TRPBF	Analog Devices	DOUBLE BALANCED					15 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Matte Tin (Sn) - annealed			e3	600 MHz	1300 MHz
LTC5567IUF#TRPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS	15 dBm		105 mA	COMPONENT	3.3	LCC16,.16SQ,25	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	300 MHz	4000 MHz
HMC129LC4	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	CERAMIC	GAAS	15 dBm			COMPONENT		LCC24,.16SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	9 dB		e4	4000 MHz	8000 MHz
HMC8193	Analog Devices	IMAGE REJECTION					-88 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel		10 dB			2500 MHz	8500 MHz
HMC773A	Analog Devices	DOUBLE BALANCED					21 dBm			COMPONENT			50 ohm		85 Cel	-55 Cel		13 dB			6000 MHz	26000 MHz
HMC1093	Analog Devices	DOUBLE BALANCED				GAAS			210 mA		3	DIE OR CHIP		RF/Microwave Mixers	85 Cel	-55 Cel
HMC115	Analog Devices					GAAS						DIE OR CHIP		RF/Microwave Mixers	125 Cel	-55 Cel
LTC5567IUF#PBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY	CMOS	15 dBm		105 mA	COMPONENT	3.3	LCC16,.16SQ,25	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	300 MHz	4000 MHz
HMC1058	Analog Devices	IMAGE REJECTION					5 dBm			COMPONENT			50 ohm		85 Cel	-55 Cel	Gold (Au)	11 dB		e4	71000 MHz	86000 MHz
HMC128	Analog Devices	DOUBLE BALANCED				GAAS				COMPONENT		DIE OR CHIP	50 ohm	RF/Microwave Mixers	85 Cel	-55 Cel	Gold (Au)	10 dB		e4	1800 MHz	5000 MHz
HMC119	Analog Devices					GAAS					5	DIE OR CHIP		RF/Microwave Mixers	125 Cel	-55 Cel
HMC8191	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	7			24 dBm	1		COMPONENT		DIE OR CHIP	50 ohm		85 Cel	-40 Cel		11 dB			6000 MHz	26500 MHz
HMC1106	Analog Devices	TRIPLE BALANCED					17 dBm			COMPONENT			50 ohm		85 Cel	-55 Cel		14 dB			15000 MHz	36000 MHz
HMC1043LC3TR	Analog Devices	TRIPLE BALANCED	SURFACE MOUNT	16	CERAMIC	GAAS						LCC16,.12SQ,20		RF/Microwave Mixers	85 Cel	-55 Cel
HMC144LC4	Analog Devices	DOUBLE BALANCED					15 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	Gold Flash (Au) - with Nickel (Ni) barrier	13 dB			6000 MHz	20000 MHz
HMC171C8TR	Analog Devices	DOUBLE BALANCED															Gold (Au) - with Nickel (Ni) barrier			e4
HMC144LC4RTR	Analog Devices		SURFACE MOUNT	24	CERAMIC	GAAS						LCC24,.16X.2,20		RF/Microwave Mixers	85 Cel	-40 Cel
LTC5576IUF#TRPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY		15 dBm		112 mA	COMPONENT	3.3/5	LCC16,.16SQ,25	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	3000 MHz	8000 MHz
HMC1048ALC3B	Analog Devices	DOUBLE BALANCED					16 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel	TUNGSTEN NICKEL GOLD	14 dB			2250 MHz	18000 MHz
HMC1043LC3	Analog Devices	TRIPLE BALANCED															GOLD OVER NICKEL			e4
HMC118	Analog Devices					GAAS						DIE OR CHIP		RF/Microwave Mixers	125 Cel	-55 Cel
HMC140	Analog Devices	DOUBLE BALANCED				GAAS				COMPONENT		DIE OR CHIP		RF/Microwave Mixers	125 Cel	-55 Cel		12 dB			1000 MHz	2000 MHz
SPM5001	Onsemi		SURFACE MOUNT	6	PLASTIC/EPOXY							FL6,.07,25		RF/Microwave Mixers
SA602AD,623	NXP Semiconductors	DOUBLE BALANCED								COMPONENT					85 Cel	-40 Cel
SA631DK-T	NXP Semiconductors	DOUBLE BALANCED					20 dBm								85 Cel	-40 Cel					800 MHz	1000 MHz
TDA6403A	NXP Semiconductors		SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR					5	SSOP28,.3		RF/Microwave Mixers	85 Cel	-20 Cel
SA611DH	NXP Semiconductors	DOUBLE BALANCED					20 dBm								85 Cel	-40 Cel					800 MHz	1000 MHz
SA602AFE	NXP Semiconductors		THROUGH HOLE MOUNT	8	CERAMIC	BIPOLAR			2.8 mA		6	DIP8,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)			e0
SA600D-T	NXP Semiconductors	DOUBLE BALANCED					20 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel					800 MHz	1200 MHz
SA621DK	NXP Semiconductors	DOUBLE BALANCED					20 dBm								85 Cel	-40 Cel			HIGH DYNAMIC RANGE		800 MHz	1000 MHz
NE602AFE	NXP Semiconductors		THROUGH HOLE MOUNT	8	CERAMIC	BIPOLAR			2.8 mA		6	DIP8,.3		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)			e0
SA611DK-T	NXP Semiconductors	DOUBLE BALANCED					20 dBm			COMPONENT					85 Cel	-40 Cel					800 MHz	1000 MHz
BGA2022	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	10 dBm	2	8 mA	COMPONENT	2.8	TSSOP6,.08	50 ohm	RF/Microwave Mixers			Tin (Sn)		HIGH ISOLATION	e3	880 MHz	2450 MHz
NE600D-T	NXP Semiconductors	DOUBLE BALANCED					20 dBm			COMPONENT			50 ohm		70 Cel	0 Cel					800 MHz	1200 MHz
SA631DK	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS	20 dBm				3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel					800 MHz	1000 MHz
BGA2022T/R	NXP Semiconductors	DOUBLE BALANCED					10 dBm	2		COMPONENT			50 ohm				Tin (Sn)		HIGH ISOLATION	e3	880 MHz	2450 MHz
NE602AN	NXP Semiconductors		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			2.8 mA		6	DIP8,.3		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)			e0
934056238115	NXP Semiconductors	DOUBLE BALANCED					10 dBm	2		COMPONENT			50 ohm				Tin (Sn)		HIGH ISOLATION	e3	880 MHz	2450 MHz
BGA2021	NXP Semiconductors	DOUBLE BALANCED					3 dBm			COMPONENT			50 ohm								500 MHz	2500 MHz
NE602AD	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			2.8 mA		6	SOP8,.25		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)			e0
TFF1013HN/N1,115	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY						5	LCC16,.1X.14,20		RF/Microwave Mixers	85 Cel	-40 Cel
SA600D	NXP Semiconductors	DOUBLE BALANCED					20 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel					800 MHz	1200 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.