Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
5 |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
220 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
1800 MHz |
3900 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
11 dB |
e4 |
19000 MHz |
33000 MHz |
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|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
110 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
195 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
IMAGE REJECTION |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
15 dB |
26000 MHz |
33000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
7 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
10 dB |
6000 MHz |
14000 MHz |
||||||||||
|
Analog Devices |
SURFACE MOUNT |
40 |
PLASTIC/EPOXY |
BICMOS |
5 |
LCC40,.24SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
9000 MHz |
15000 MHz |
||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
125 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
23 dBm |
110 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
MATTE TIN |
13 dB |
e3 |
500 MHz |
2700 MHz |
||||
|
Analog Devices |
DOUBLE BALANCED |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
9 dB |
e4 |
3000 MHz |
7000 MHz |
||||||||||||
|
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 dB |
e4 |
11000 MHz |
16000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
11 dB |
4000 MHz |
8500 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
12 dB |
e3 |
700 MHz |
1500 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
13 dB |
e3 |
2300 MHz |
4000 MHz |
||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
220 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
13 dB |
22000 MHz |
32000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
HIGH ISOLATION |
e3 |
500 MHz |
1700 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COAXIAL |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 dB |
2.92 MM; SMA |
e4 |
16000 MHz |
32000 MHz |
|||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COAXIAL |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 dB |
2.92 MM; SMA |
e4 |
24000 MHz |
38000 MHz |
|||||||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
e3 |
700 MHz |
1200 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
COMPONENT |
3.3/5 |
LCC20,.20SQ,25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
8.4 dB |
HIGH ISOLATION |
e3 |
1200 MHz |
2500 MHz |
||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tungsten/Nickel/Gold (W/Ni/Au) |
|||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
|||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
20 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
13 dB |
e4 |
22000 MHz |
32000 MHz |
||||||
Analog Devices |
TRIPLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
23 dBm |
168 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10 dB |
e0 |
2000 MHz |
2700 MHz |
|||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||
Analog Devices |
DOUBLE BALANCED |
24 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
11 dB |
e0 |
9000 MHz |
15000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
20 dBm |
MODULE |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
SMA |
e4 |
15000 MHz |
23000 MHz |
||||||||||||
Analog Devices |
DOUBLE BALANCED |
|||||||||||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
11 dB |
e4 |
35000 MHz |
45000 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
20 dBm |
300 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
100 MHz |
6000 MHz |
||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
200 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
10 dB |
e4 |
6000 MHz |
10000 MHz |
||||||||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
COMPONENT |
3.3/5 |
LCC20,.20SQ,25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
HIGH ISOLATION |
e3 |
1200 MHz |
2500 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COAXIAL |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
15 dB |
SMA |
e4 |
20000 MHz |
31000 MHz |
|||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
75 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
|||||||||||||||
|
Analog Devices |
SINGLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
11 dB |
e3 |
3000 MHz |
3800 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.