RF/Microwave Mixers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
SA621DK-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm								85 Cel	-40 Cel		HIGH DYNAMIC RANGE		800 MHz	1000 MHz
NE600D	NXP Semiconductors	DOUBLE BALANCED						20 dBm			COMPONENT			50 ohm		70 Cel	0 Cel				800 MHz	1200 MHz
BGA2022,115	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm	2	8 mA	COMPONENT	2.8	TSSOP6,.08	50 ohm	RF/Microwave Mixers			Tin (Sn)		e3	880 MHz	2450 MHz
SA611DH-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm								85 Cel	-40 Cel				800 MHz	1000 MHz
TDA5745TS	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR				65 mA		5	SSOP24,.3		RF/Microwave Mixers	85 Cel	-20 Cel
SA611DK	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY			20 dBm			COMPONENT	3/5	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel				800 MHz	1000 MHz
934063112115	NXP Semiconductors	DOUBLE BALANCED						10 dBm	2		COMPONENT			50 ohm				TIN	HIGH ISOLATION	e3	880 MHz	2450 MHz
602/BPA	NXP Semiconductors		THROUGH HOLE MOUNT	8	CERAMIC	BIPOLAR	38535Q/M;38534H;883B			4 mA		6	DIP8,.3		RF/Microwave Mixers	125 Cel	-55 Cel	Tin/Lead (Sn/Pb)		e0
TDA5744TS	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR				65 mA		5	SSOP24,.3		RF/Microwave Mixers	85 Cel	-20 Cel
NE602AD-T	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				2.8 mA		6	SOP8,.25		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
MC13142DR2	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				26 mA		3	SOP16,.25		RF/Microwave Mixers	85 Cel	-40 Cel
CMY91E6327	Infineon Technologies	DOUBLE BALANCED									COMPONENT										800 MHz	2500 MHz
CMY210E6433	Infineon Technologies	DOUBLE BALANCED						10 dBm			COMPONENT			50 ohm							500 MHz	2500 MHz
PMB2335	Infineon Technologies	TRIPLE BALANCED	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR					COMPONENT	2.7/4.5	TSSOP10,.19,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0		3000 MHz
TDA6130-5X4	Infineon Technologies	DOUBLE BALANCED	SURFACE MOUNT	14	PLASTIC/EPOXY	BIPOLAR				2.1 mA	COMPONENT	6	SOP14,.25		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
CMY91E6433	Infineon Technologies	DOUBLE BALANCED									COMPONENT										800 MHz	2500 MHz
24-27GHZMIXER	Infineon Technologies					GAAS							DIE OR CHIP		RF/Microwave Mixers
CMY211E6327	Infineon Technologies	DOUBLE BALANCED									COMPONENT			50 ohm							500 MHz	2500 MHz
PMB2330	Infineon Technologies		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR						3/7	SOP8,.25		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		e0
CMY90	Infineon Technologies		SURFACE MOUNT	7	PLASTIC/EPOXY	GAAS				2.5 mA		3.3/5	SO7,.28		RF/Microwave Mixers			Tin/Lead (Sn/Pb)		e0
TDA6131XS	Infineon Technologies	TRIPLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				13.1 mA	COMPONENT	2.7/4.5	TSSOP16,.25		RF/Microwave Mixers	85 Cel	-40 Cel		LOW NOISE			3000 MHz
PMB2331	Infineon Technologies	TRIPLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					COMPONENT	2.7/4.5	SOP8,.25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0		2000 MHz
PMB2210T	Infineon Technologies		SURFACE MOUNT	20	PLASTIC/EPOXY							5,5/7	SOP20,.4		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
TDA6130X4	Infineon Technologies		SURFACE MOUNT	14	PLASTIC/EPOXY	BIPOLAR						6	SOP14,.25		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
PMB2331-T	Infineon Technologies	DOUBLE BALANCED									COMPONENT					85 Cel	-30 Cel					2000 MHz
T602B_HMIX	Infineon Technologies	DOUBLE BALANCED									COMPONENT			50 ohm								77 MHz
TBB042G	Infineon Technologies		SURFACE MOUNT	14	PLASTIC/EPOXY	BIPOLAR				2.9 mA		12	SOP14,.25		RF/Microwave Mixers	70 Cel	-15 Cel	Tin/Lead (Sn/Pb)		e0
TBB204G	Infineon Technologies		SURFACE MOUNT	14	PLASTIC/EPOXY					3.9 mA		5	SOP14,.25		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		e0
TUA6010X	Infineon Technologies	DOUBLE BALANCED	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR				33 mA		5	SOP28,.4		RF/Microwave Mixers	80 Cel	-20 Cel	Tin/Lead (Sn/Pb)		e0
MAX19757ETX+T	Maxim Integrated	DOUBLE BALANCED	SURFACE MOUNT	36	PLASTIC/EPOXY	BICMOS				420 mA		5	LCC36,.25SQ,20		RF/Microwave Up/Down Converters
MAX19757ETX+	Maxim Integrated	DOUBLE BALANCED	SURFACE MOUNT	36	PLASTIC/EPOXY	BICMOS				420 mA		5	LCC36,.25SQ,20		RF/Microwave Up/Down Converters			MATTE TIN		e3
MAX9995ETX-T	Maxim Integrated	DOUBLE BALANCED	SURFACE MOUNT	36	PLASTIC/EPOXY	BICMOS		20 dBm	1.5	110 mA	COMPONENT	5	LCC36,.25SQ,20	50 ohm	RF/Microwave Up/Down Converters	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2200 MHz
MAX9995ETX	Maxim Integrated	DOUBLE BALANCED	SURFACE MOUNT	36	PLASTIC/EPOXY	BICMOS		20 dBm	1.5	110 mA	COMPONENT	5	LCC36,.25SQ,20	50 ohm	RF/Microwave Up/Down Converters	85 Cel	-40 Cel	TIN LEAD		e0	1700 MHz	2200 MHz
TA8116F	Toshiba	DOUBLE BALANCED
TA4101F(TE85L)	Toshiba		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				7.5 mA		5	TSSOP8,.1		RF/Microwave Mixers	85 Cel	-40 Cel
TA4101F	Toshiba	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				7.5 mA	COMPONENT	5	TSSOP8,.16		RF/Microwave Mixers	85 Cel	-40 Cel
TA8163F	Toshiba	DOUBLE BALANCED
TA4101F(TE85L,F)	Toshiba		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				7.5 mA		5	TSSOP8,.1		RF/Microwave Mixers	85 Cel	-40 Cel
TA31124FN	Toshiba	DOUBLE BALANCED														85 Cel	-30 Cel	Tin/Lead (Sn/Pb)		e0	10 MHz	100 MHz
UPC8002GR-E1-A	Renesas Electronics		SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				2.2 mA		3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-30 Cel
UPC8106TB-E3	Renesas Electronics	DOUBLE BALANCED																Tin/Lead (Sn/Pb)		e0
UPC8187TB-E3	Renesas Electronics	DOUBLE BALANCED																Tin/Lead (Sn/Pb)		e0
HA21009MS(5V)	Renesas Electronics	DOUBLE BALANCED									COMPONENT
UPC8172TB-E3-A	Renesas Electronics	DOUBLE BALANCED						10 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel				800 MHz	2500 MHz
HA22001T(5V)EL	Renesas Electronics	DOUBLE BALANCED									COMPONENT
HA22001T	Renesas Electronics	DOUBLE BALANCED									COMPONENT					85 Cel	-30 Cel		LOW NOISE
UPC8163TB-E3	Renesas Electronics	DOUBLE BALANCED																Tin/Lead (Sn/Pb)		e0
HA22001T(5V)	Renesas Electronics	DOUBLE BALANCED									COMPONENT

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.