1000 A Insulated Gate Bipolar Transistors (IGBT) 19

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FZ1000R33HE3BPSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3550 ns

7

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1150 ns

FD1000R33HE3KBPSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3550 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1150 ns

APTGT750U60D4G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2300 W

1000 A

UNSPECIFIED

MOTOR CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

1

730 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

350 ns

CM1000DU-34NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

8900 W

1000 A

UNSPECIFIED

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

2

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

CM1000E3U-34NF

Powerex

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DF1000R17IE4P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF1000R17IE4PBPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

FZ200R65KF2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3800 W

1000 A

UNSPECIFIED

POWER CONTROL

4.9 V

UNSPECIFIED

RECTANGULAR

1

6500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FZ200R65KF2NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

6500 ns

5

FLANGE MOUNT

150 Cel

SILICON

6300 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FD200R65KF2-K

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3800 W

1000 A

UNSPECIFIED

POWER CONTROL

4.9 V

UNSPECIFIED

RECTANGULAR

1

6500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FD1000R33HE3-K

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3550 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1150 ns

FZ1000R33HE3BOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1000 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

2

3550 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1150 ns

FZ1000R33HL3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9600 W

1000 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

4700 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FZ1000R25KF1

Infineon Technologies

10400 W

1000 A

3.5 V

1

Insulated Gate BIP Transistors

125 Cel

2500 V

20 V

FZ1000R33HE3

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

9600 W

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3550 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1150 ns

FZ1000R33HL3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9600 W

1000 A

UNSPECIFIED

2.4 V

UNSPECIFIED

RECTANGULAR

2

4700 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

ST1000EX21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1000 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

ROUND

1

1700 ns

4

DISK BUTTON

SILICON

2500 V

END

O-CEDB-X4

2200 ns

T1000EC33G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6400 W

1000 A

CERAMIC, METAL-SEALED COFIRED

2.97 V

UNSPECIFIED

RECTANGULAR

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3500 ns

T1000TC33E

Littelfuse

N-CHANNEL

SINGLE

YES

6400 W

1000 A

CERAMIC, METAL-SEALED COFIRED

2.97 V

UNSPECIFIED

ROUND

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3500 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.