Infineon Technologies - FZ200R65KF2NOSA1

FZ200R65KF2NOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ200R65KF2NOSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1000 A; No. of Elements: 1; Package Shape: RECTANGULAR;
Datasheet FZ200R65KF2NOSA1 Datasheet
In Stock653
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 1000 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 6500 ns
No. of Terminals: 5
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 6300 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 1120 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
653 - -

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