Infineon Technologies - FZ1000R25KF1

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FZ1000R25KF1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1000R25KF1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 10400 W; Maximum Collector Current (IC): 1000 A; Maximum Collector-Emitter Voltage: 2500 V; Maximum VCEsat: 3.5 V; No. of Elements: 1;
Datasheet FZ1000R25KF1 Datasheet
In Stock534
NAME DESCRIPTION
Maximum Collector Current (IC): 1000 A
Maximum Power Dissipation (Abs): 10400 W
Maximum Collector-Emitter Voltage: 2500 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.5 V
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