Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
70 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
180 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
23 ns |
-55 Cel |
20 V |
265 ns |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
17.5 ns |
||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
70 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
100 ns |
180 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
23 ns |
-55 Cel |
20 V |
265 ns |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252AA |
17.5 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
70 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
100 ns |
180 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
23 ns |
-55 Cel |
20 V |
265 ns |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
17.5 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
180 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
17.5 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
NO |
32 W |
17 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.2 V |
Matte Tin (Sn) - annealed |
e3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
32 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
535 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.2 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
23.5 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
17 A |
METAL |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
SILICON |
600 V |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
ULTRA FAST |
TO-204AE |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
75 W |
17 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
5.5 V |
TIN LEAD |
SINGLE |
S-XSFM-P3 |
ISOLATED |
Not Qualified |
ULTRA FAST |
TO-254AA |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
17 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
S-XSFM-P3 |
ISOLATED |
ULTRA FAST |
TO-254AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
17 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
S-XSFM-P3 |
ISOLATED |
ULTRA FAST |
TO-254AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
75 W |
17 A |
UNSPECIFIED |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
5.5 V |
TIN LEAD |
SINGLE |
S-XSFM-P3 |
ISOLATED |
Not Qualified |
ULTRA FAST |
TO-254AA |
e0 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
17 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
4 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
6.5 V |
TIN LEAD |
UPPER |
S-XUUC-N4 |
Not Qualified |
INTEGRATED GATE RESISTOR |
e0 |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
17 A |
PLASTIC/EPOXY |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
130 ns |
171 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
270 ns |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
61 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
62 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
18 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
130 ns |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
62 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
45 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRAFAST, HIGH SPEED |
e3 |
60 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
76 W |
17 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
6 |
135 ns |
16 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X16 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
29 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
ULTRAFAST, HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
202 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
50 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
120 ns |
370 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
202 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
50 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
7 |
25 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-P25 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
63 W |
17 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
65 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
350 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
UPPER |
R-PUFM-X24 |
ISOLATED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
60 W |
17 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.