20 A Insulated Gate Bipolar Transistors (IGBT) 311

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGP10N50	Littelfuse	N-CHANNEL		NO	100 W	20 A			200 ns					1500 ns				Insulated Gate BIP Transistors	150 Cel		500 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGP10N100A	Littelfuse	N-CHANNEL		NO	100 W	20 A			200 ns					1000 ns				Insulated Gate BIP Transistors	150 Cel		1000 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYA8N90C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		238 ns	2	SMALL OUTLINE		175 Cel	SILICON	900 V		-55 Cel	20 V		6 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	39 ns
LGD8205ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	8000 ns	14000 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	10000 ns	-55 Cel	15 V	18000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							7500 ns	AEC-Q101
IXGM10N50A	Littelfuse	N-CHANNEL		NO	100 W	20 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM10N90A	Littelfuse	N-CHANNEL		NO	100 W	20 A			200 ns					1000 ns				Insulated Gate BIP Transistors	150 Cel		900 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM10N60	Littelfuse	N-CHANNEL		NO	100 W	20 A			200 ns					1500 ns				Insulated Gate BIP Transistors	150 Cel		600 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXA12IF1200TC	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	20 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		350 ns	2	SMALL OUTLINE		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA		NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
LGB8202ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	14000 ns	24000 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							18500 ns	AEC-Q101
LGD8201TH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	8000 ns	14000 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	10000 ns	-55 Cel	15 V	18000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							7500 ns	AEC-Q101
IXA12IF1200PC	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		350 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	PURE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e3	NOT SPECIFIED	NOT SPECIFIED	110 ns
IXGA12N100A	Littelfuse	N-CHANNEL	SINGLE	YES	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	700 ns	900 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	HIGH SPEED	TO-263AB	e3	10	260	100 ns
IXGP12N100	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	700 ns	900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	100 ns
IXGP12N100A	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	700 ns	900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	100 ns
IXGA12N100	Littelfuse	N-CHANNEL	SINGLE	YES	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	700 ns	900 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	HIGH SPEED	TO-263AB	e3	10	260	100 ns
IXGP12N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	1000 ns	900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED, FAST	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	100 ns
IXGP12N100AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	700 ns	900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED, FAST	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	100 ns
IXGA12N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	1000 ns	900 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	HIGH SPEED, FAST	TO-263AB	e3	10	260	100 ns
IXBT10N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		3.8 V	GULL WING	RECTANGULAR	1		1800 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	63 ns
IXGH12N100AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		850 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED, FAST	TO-247AD	e3	10	260	100 ns
IXGH12N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		850 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED, FAST	TO-247AD	e3	10	260	100 ns
IXGH12N100	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		2150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	300 ns
IXGH12N100A	Littelfuse	N-CHANNEL	SINGLE	NO	100 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1850 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	300 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.