Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
20 A |
2.1 V |
1 |
Insulated Gate BIP Transistors |
100 Cel |
600 V |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
90 W |
20 A |
2.8 V |
3 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
1000 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T11 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
300 ns |
500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
120 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
|||||||||||||||||||
Toshiba |
20 A |
2.3 V |
1 |
Insulated Gate BIP Transistors |
100 Cel |
600 V |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
250 V |
20 V |
2.4 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
130 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE |
NO |
20 A |
UNSPECIFIED |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
6 |
500 ns |
20 |
IN-LINE |
150 Cel |
SILICON |
600 V |
TIN LEAD |
DUAL |
R-XDIP-T20 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e0 |
150 ns |
||||||||||||||||||||||||||
Toshiba |
NO |
60 W |
20 A |
UNSPECIFIED |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
20 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
DUAL |
R-XDIP-T20 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
6000 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
60 W |
150 Cel |
SILICON |
400 V |
20 V |
5 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
51 W |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
750 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
380 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
7.5 V |
|||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
75 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
210 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
22.5 W |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
52 W |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
7.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
117 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
30 W |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
7.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
63 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
140 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
63 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
140 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
7.5 V |
|||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
48 W |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
5.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
117 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
43 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
300 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
Not Qualified |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
30 W |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
140 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
60 ns |
||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
85 W |
20 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
260 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
80 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
24 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
90 ns |
|||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
2000 ns |
Insulated Gate BIP Transistors |
150 Cel |
900 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
2000 ns |
Insulated Gate BIP Transistors |
150 Cel |
800 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1600 V |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
260 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
238 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
39 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
238 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
39 ns |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1000 ns |
Insulated Gate BIP Transistors |
150 Cel |
800 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1000 ns |
Insulated Gate BIP Transistors |
150 Cel |
900 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
6500 ns |
AEC-Q101 |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
2000 ns |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
165 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
14700 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
365 V |
2750 ns |
-55 Cel |
15 V |
21000 ns |
2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
2450 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
900 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
5.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED, FAST |
TO-263AB |
e3 |
10 |
260 |
100 ns |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
6500 ns |
AEC-Q101 |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1500 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
6500 ns |
AEC-Q101 |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1000 ns |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
500 ns |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
500 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
6000 ns |
GULL WING |
RECTANGULAR |
1 |
12000 ns |
12500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
500 V |
8000 ns |
-55 Cel |
15 V |
20000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
4400 ns |
AEC-Q101 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1400 V |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
260 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
165 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
14700 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
365 V |
2750 ns |
-55 Cel |
15 V |
21000 ns |
2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
2450 ns |
AEC-Q101 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.