20 A Insulated Gate Bipolar Transistors (IGBT) 311

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MIG20J503L

Toshiba

20 A

2.1 V

1

Insulated Gate BIP Transistors

100 Cel

600 V

MIG20J906EA

Toshiba

90 W

20 A

2.8 V

3

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

MP6753

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

60 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

6

1000 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

400 ns

GT20J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

120 W

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

MIG20J503H

Toshiba

20 A

2.3 V

1

Insulated Gate BIP Transistors

100 Cel

600 V

GT20D201-O

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

250 V

20 V

2.4 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

GT20J101

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MIG20J855H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE

NO

20 A

UNSPECIFIED

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

6

500 ns

20

IN-LINE

150 Cel

SILICON

600 V

TIN LEAD

DUAL

R-XDIP-T20

ISOLATED

Not Qualified

HIGH SPEED

e0

150 ns

MIG20J805

Toshiba

NO

60 W

20 A

UNSPECIFIED

2.8 V

THROUGH-HOLE

RECTANGULAR

1

20

IN-LINE

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

DUAL

R-XDIP-T20

Not Qualified

GT20G102

Toshiba

N-CHANNEL

SINGLE

NO

60 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

IN-LINE

Insulated Gate BIP Transistors

60 W

150 Cel

SILICON

400 V

20 V

5 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

RJH60A83RDPD-A0#J2

Renesas Electronics

N-CHANNEL

YES

51 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

2SH28

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

750 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

380 ns

RJQ6021DPM

Renesas Electronics

N-CHANNEL

NO

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

2SH13

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

210 ns

RJH60D2DPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

22.5 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60A83RDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

52 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

RJH60D1DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

117 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

RJH60A83RDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

30 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

RJH60D2DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJH60D2DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJQ6022DPM

Renesas Electronics

N-CHANNEL

NO

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

RJQ6008DPM-00#T0

Renesas Electronics

N-CHANNEL

NO

48 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

RJH60D1DPP-M0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

117 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

43 ns

GN6020C

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

300 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSIP-T3

Not Qualified

RJH60D1DPP-E0#T2

Renesas Electronics

N-CHANNEL

NO

30 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60D2DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

140 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

60 ns

MUBW10-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

85 W

20 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

260 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

80 ns

MUBW25-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

90 ns

IXGP10N90

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N80

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXBH20N160

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

260 ns

IXYP8N90C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

238 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

39 ns

IXYP8N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

238 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

39 ns

IXGM10N80A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N90A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

LGB8206ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

IXGP10N100

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

LGB8207TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

IXGA12N100AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-263AB

e3

10

260

100 ns

LGD8201ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

IXGM10N50

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

LGB8206ARI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

IXGM10N100A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGM10N60A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N50A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

LGB8245TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

6000 ns

GULL WING

RECTANGULAR

1

12000 ns

12500 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

8000 ns

-55 Cel

15 V

20000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

4400 ns

AEC-Q101

IXBH20N140

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1400 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

260 ns

LGB8207ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.