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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJH60A83RDPD-A0#J2 |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 51 W; Maximum Collector Current (IC): 20 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 30 V; |
| Datasheet | RJH60A83RDPD-A0#J2 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | 20 A |
| Maximum Power Dissipation (Abs): | 51 W |
| Maximum Collector-Emitter Voltage: | 600 V |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 30 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









