Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-263AB |
e3 |
30 |
260 |
3700 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
428 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
24 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
242 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
ISOLATED |
Not Qualified |
e3 |
30 |
245 |
23 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
84 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
140 ns |
637 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
121 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
145 W |
20 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
12 |
355 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
67 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
42 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
170 ns |
640 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
53 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
500 ns |
21 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
247 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
e3 |
30 |
260 |
19 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
139 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
24.8 ns |
89.3 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
8.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
15.4 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
42 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
24.8 ns |
89.3 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
8.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
15.4 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
340 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
170 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
|||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
140 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
3.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1800 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
10 |
260 |
63 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
110 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
630 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
300 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
242 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
Not Qualified |
ULTRA FAST |
e3 |
30 |
245 |
23 ns |
||||||||||||||||||||
|
Alpha & Omega Semiconductor |
N-CHANNEL |
NO |
163 W |
20 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
296 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
21 ns |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
115 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
260 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
296 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
21 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
72 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
220 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
188 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
247 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
19 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
165 W |
20 A |
2700 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
365 V |
15 V |
2 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
238 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
10 |
260 |
39 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
242 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
23 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
85 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
180 W |
150 Cel |
SILICON |
250 V |
20 V |
3.2 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
85 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
||||||||||||||||||||
Motorola |
N-CHANNEL |
SINGLE |
NO |
100 W |
20 A |
METAL |
MOTOR CONTROL |
150 ns |
PIN/PEG |
ROUND |
1 |
8000 ns |
12000 ns |
2 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
500 V |
20 V |
4 V |
TIN LEAD |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
TO-204AA |
e0 |
225 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
18000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.4 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOGIC LEVEL |
TO-220AB |
e0 |
8000 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
180 W |
150 Cel |
SILICON |
250 V |
20 V |
3.2 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
110 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
630 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
300 ns |
||||||||||||||||||
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
238 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
39 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
90 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
105 W |
20 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
500 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
150 W |
20 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
5.7 V |
TIN |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
3700 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
115 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
214 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
26.8 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
242 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
23 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
695 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRAFAST, HIGH SPEED |
TO-247AE |
e0 |
153 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
NOT SPECIFIED |
NOT SPECIFIED |
6500 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 W |
20 A |
8000 ns |
14000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
15 V |
2.1 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.1 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOGIC LEVEL COMPATIBLE |
e3 |
6500 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
123 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRAFAST, HIGH SPEED |
TO-247AE |
e0 |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
88 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
6500 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
18500 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
440 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
6500 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.