20 A Insulated Gate Bipolar Transistors (IGBT) 311

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGS14C40LPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

4000 ns

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

12 V

2.2 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

LOW SATURATION VOLTAGE

TO-263AB

e3

30

260

3700 ns

IKD10N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252

e3

24 ns

STGB10NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

ISOLATED

Not Qualified

e3

30

245

23 ns

IRG4PH30KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

84 ns

THROUGH-HOLE

RECTANGULAR

1

140 ns

637 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

121 ns

F3L15R12W2H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

145 W

20 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

12

355 ns

34

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

67 ns

UL APPROVED

IRG4PH30KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

640 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

53 ns

FP10R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

500 ns

21

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

STGD10NC60HT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

247 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

Not Qualified

e3

30

260

19 ns

FGP10N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

139 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

24.8 ns

89.3 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-220AB

e3

15.4 ns

FGPF10N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

24.8 ns

89.3 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

15.4 ns

FP10R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP10R12W1T4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

108 ns

GT20J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

170 ns

FP10R12W1T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP10R12W1T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

IXBH10N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

3.8 V

THROUGH-HOLE

RECTANGULAR

1

1800 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

10

260

63 ns

IXGH10N170

Littelfuse

N-CHANNEL

SINGLE

NO

110 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

300 ns

STGB10NC60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

Not Qualified

ULTRA FAST

e3

30

245

23 ns

AOT10B60D

Alpha & Omega Semiconductor

N-CHANNEL

NO

163 W

20 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

IGP10N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

21 ns

STGP10M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

27 ns

IKP10N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

21 ns

NGTB10N60R2DT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE

2.3 V

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

188 ns

STGD10NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

247 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

19 ns

NGB8207ABNT4G

Onsemi

N-CHANNEL

YES

165 W

20 A

2700 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

365 V

15 V

2 V

MATTE TIN

e3

IXYY8N90C3

Littelfuse

N-CHANNEL

SINGLE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

10

260

39 ns

STGD10NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23 ns

IXA12IF1200PB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

GT20D201

Toshiba

P-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

180 W

150 Cel

SILICON

250 V

20 V

3.2 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

IXA12IF1200HB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

MGM20N50

Motorola

N-CHANNEL

SINGLE

NO

100 W

20 A

METAL

MOTOR CONTROL

150 ns

PIN/PEG

ROUND

1

8000 ns

12000 ns

2

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

20 V

4 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

225 ns

MGP20N40CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

18000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.4 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL

TO-220AB

e0

8000 ns

GT20D101

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

180 W

150 Cel

SILICON

250 V

20 V

3.2 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

IXGT10N170

Littelfuse

N-CHANNEL

SINGLE

YES

110 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

630 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

300 ns

IXYY8N90C3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

39 ns

MUBW10-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

90 ns

FP10R12W1T4_B3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 W

20 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

500 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

108 ns

IKD10N60RFATMA1

Infineon Technologies

N-CHANNEL

YES

150 W

20 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

5.7 V

TIN

1

e3

IRGB14C40LPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

4000 ns

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

12 V

2.2 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

3700 ns

STGP10H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

214 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

26.8 ns

STGP10NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

23 ns

MGW12N120

Onsemi

N-CHANNEL

SINGLE

NO

125 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

153 ns

NGB8202ANTF4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

6500 ns

NGB8206ANTF4G

Onsemi

N-CHANNEL

YES

150 W

20 A

8000 ns

14000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

15 V

2.1 V

MATTE TIN

e3

NGB8206ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

15 V

2.1 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

LOGIC LEVEL COMPATIBLE

e3

6500 ns

MGW12N120D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

123 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

NGD8205NT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

88 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

6500 ns

NGP8203NG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

18500 ns

3

FLANGE MOUNT

175 Cel

SILICON

440 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

6500 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.