Onsemi - MGP20N40CL

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MGP20N40CL by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MGP20N40CL
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 15 V;
Datasheet MGP20N40CL Datasheet
In Stock356
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 20 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage: 2.4 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
Nominal Turn Off Time (toff): 18000 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 8000 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 440 V
Additional Features: LOGIC LEVEL
Maximum Gate-Emitter Voltage: 15 V
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