Infineon Technologies - IKD10N60RFATMA1

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IKD10N60RFATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKD10N60RFATMA1
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Finish: TIN;
Datasheet IKD10N60RFATMA1 Datasheet
In Stock444
NAME DESCRIPTION
Other Names: IKD10N60RFATMA1DKR
IKD10N60RF-TR-ND
IKD10N60RFATMA1CT
SP000969366
IKD10N60RF-CT-ND
IKD10N60RF-CT
IKD10N60RF-DKR
IKD10N60RF-DKR-ND
IKD10N60RFATMA1TR
IKD10N60RF-TR
IKD10N60RF
-IKD10N60RF
SP000939366
Maximum Collector Current (IC): 20 A
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 150 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
444 $0.678 $301.032

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