MIG20J855H by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MIG20J855H
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-XDIP-T20; Qualification: Not Qualified;
Datasheet	MIG20J855H Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	20 A
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE
Transistor Element Material:	SILICON
Transistor Application:	MOTOR CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
Nominal Turn Off Time (toff):	500 ns
No. of Terminals:	20
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	DUAL
Nominal Turn On Time (ton):	150 ns
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-XDIP-T20
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Additional Features:	HIGH SPEED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED

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