21 A Insulated Gate Bipolar Transistors (IGBT) 34

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
ISL9V3040D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	450 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	2800 ns
ISL9V3040P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	450 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED	2800 ns
ISL9V3040S3ST-F085C	Onsemi	N-CHANNEL	SINGLE	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	.007 ns	1.65 V	GULL WING	RECTANGULAR	1	.015 ns	7.6 ns	2	SMALL OUTLINE		175 Cel	SILICON	400 V	.011 ns	-55 Cel	10 V	.03 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	260	2.8 ns	AEC-Q101
ISL9V3040D3ST-F085C	Onsemi	N-CHANNEL	SINGLE	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	.007 ns	1.65 V	GULL WING	RECTANGULAR	1	.015 ns	.0076 ns	2	SMALL OUTLINE		175 Cel	SILICON	400 V	.011 ns	-55 Cel	10 V	.03 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1				TO-252AA	e3	30	260	.0028 ns	AEC-Q101
ISL9V3040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-55 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	2800 ns	AEC-Q101
ISL9V3036S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
HGTP5N120BND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		21 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		357 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			35 ns
HGTG5N120BND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		21 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		357 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			35 ns
RGT50TM65DGC9	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		21 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		210 ns	3	FLANGE MOUNT			SILICON	650 V		-40 Cel				TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			65 ns
FGD2736G3-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE		175 Cel	SILICON	360 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	3900 ns
FGB3040CS	Onsemi	N-CHANNEL	SINGLE	YES	150 W	21 A	PLASTIC/EPOXY		7000 ns		GULL WING	RECTANGULAR	1	15000 ns	7300 ns	6	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			12 V		2.2 V	MATTE TIN	SINGLE	R-PSSO-G6	1		Not Qualified			e3	30	260	2100 ns
ISL9V3036S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
ISL9V3036D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns
ISL9V3040S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	450 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
ISL9V3040S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	IN-LINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
ISL9V3036D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2800 ns
ISL9V3040S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
ISL9V3036P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	FLANGE MOUNT		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2800 ns
ISL9V3040D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns
ISL9V3036D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns
STGP10NC60S	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		560 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			22.5 ns
IKW08N120CS7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	106 W	21 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		255 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-40 Cel	20 V		6.45 V		SINGLE	R-PSFM-T3					TO-247				29 ns
IRGS4715DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	21 A	PLASTIC/EPOXY	POWER CONTROL	30 ns	2 V	GULL WING	RECTANGULAR	1	30 ns	120 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	80 ns	-40 Cel	30 V	150 ns	7.4 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB				50 ns
BUP303	Infineon Technologies	N-CHANNEL		NO	165 W	21 A												Insulated Gate BIP Transistors	150 Cel		1000 V			20 V		6.5 V	Tin/Lead (Sn/Pb)								e0
IRGS4715DTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	21 A	PLASTIC/EPOXY	POWER CONTROL	30 ns	2 V	GULL WING	RECTANGULAR	1	30 ns	120 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	80 ns	-40 Cel	30 V	150 ns	7.4 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB				50 ns
BUP203	Infineon Technologies	N-CHANNEL		NO	165 W	21 A			200 ns					300 ns				Insulated Gate BIP Transistors	150 Cel		1000 V			20 V		6.5 V	Tin/Lead (Sn/Pb)								e0
IRGS4715DTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	21 A	PLASTIC/EPOXY	POWER CONTROL	30 ns	2 V	GULL WING	RECTANGULAR	1	30 ns	120 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	80 ns	-40 Cel	30 V	150 ns	7.4 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB				50 ns
SKB10N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	25 ns		GULL WING	RECTANGULAR	1	76 ns	329 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e0			50 ns
SGW10N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	32 ns		THROUGH-HOLE	RECTANGULAR	1	59 ns	329 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			50 ns
SGB10N60	Infineon Technologies	N-CHANNEL	SINGLE	YES	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	32 ns		GULL WING	RECTANGULAR	1	59 ns	329 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3			50 ns
SGP10N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	32 ns		THROUGH-HOLE	RECTANGULAR	1	59 ns	329 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			50 ns
SIGC12T60SN	Infineon Technologies	N-CHANNEL	SINGLE	YES		21 A	UNSPECIFIED	MOTOR CONTROL	40 ns		NO LEAD	SQUARE	1	55 ns	280 ns	3	UNCASED CHIP	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V		UPPER	S-XUUC-N3			Not Qualified						57 ns
IRGB4715DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	21 A	PLASTIC/EPOXY	POWER CONTROL	30 ns	2 V	THROUGH-HOLE	RECTANGULAR	1	30 ns	120 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	80 ns	-40 Cel	30 V	150 ns	7.4 V		SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED	50 ns
IXYJ20N120C3D1	Littelfuse	N-CHANNEL		NO	105 W	21 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.