250 A Insulated Gate Bipolar Transistors (IGBT) 19

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXXX110N65B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		250 ns	3	IN-LINE		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3		COLLECTOR				e3			65 ns
FZ250R65KE3NPSA1	Infineon Technologies				4800 W	250 A			3.4 V			1					Insulated Gate BIP Transistors	150 Cel		6500 V		20 V											NOT SPECIFIED	NOT SPECIFIED
APT200GN60J	Microchip Technology	N-CHANNEL	SINGLE	NO	682 W	250 A	PLASTIC/EPOXY	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1		1210 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V		TIN SILVER COPPER	UPPER	R-PUFM-X4	1	ISOLATED	Not Qualified			e1			75 ns
IXXK110N65B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		250 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	65 ns
GA250TD120U	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		250 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2		996 ns	7	FLANGE MOUNT			SILICON	1200 V					UPPER	R-XUFM-X7		ISOLATED	Not Qualified	LOW CONDUCTION LOSS			40	260	958 ns	UL APPROVED
FZ250R65KE3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		250 A	PLASTIC/EPOXY	POWER CONTROL	3.4 V	UNSPECIFIED	RECTANGULAR	1		8100 ns	5	FLANGE MOUNT		125 Cel	SILICON	6500 V	-50 Cel	20 V	6.4 V		UPPER	R-PUFM-X5		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	850 ns
FF150R17KE4HOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		250 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2		930 ns	5	FLANGE MOUNT		175 Cel	SILICON	1700 V					UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	355 ns
FS200R07A1E3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	790 W	250 A	UNSPECIFIED	POWER CONTROL	1.9 V	UNSPECIFIED	RECTANGULAR	6		490 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V		20 V			UPPER	R-XUFM-X13	1	ISOLATED	Not Qualified					260	120 ns
FF150R17KE4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	250 A	UNSPECIFIED	POWER CONTROL	2.3 V	UNSPECIFIED	RECTANGULAR	2		930 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1700 V		20 V			UPPER	R-XUFM-X5	1	ISOLATED	Not Qualified					260	355 ns
BSM150GT120DLC	Infineon Technologies				1000 W	250 A			2.6 V			3					Insulated Gate BIP Transistors	125 Cel		1200 V		20 V
FS200R07A1E3BOMA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		250 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	6		490 ns	13	FLANGE MOUNT		175 Cel	SILICON	650 V					UPPER	R-XUFM-X13	1	ISOLATED							120 ns
FS200R07A1E3BOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		250 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	6		490 ns	13	FLANGE MOUNT		175 Cel	SILICON	650 V					UPPER	R-XUFM-X13	1	ISOLATED	Not Qualified						120 ns
IXGA42N30C3	Littelfuse	N-CHANNEL	SINGLE	YES	223 W	250 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	120 ns	229 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V	-55 Cel	20 V	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	43 ns
IXGP42N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	223 W	250 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	120 ns	229 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			43 ns
IXYN150N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	UNSPECIFIED	RECTANGULAR	1		330 ns	4	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					110 ns	UL RECOGNIZED
IXYN120N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	250 A	PLASTIC/EPOXY	POWER CONTROL	1.9 V	UNSPECIFIED	RECTANGULAR	1		422 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		UPPER	R-PUFM-X4		ISOLATED							60 ns	UL RECOGNIZED
MG17150D-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		250 A	UNSPECIFIED	POWER CONTROL	2.45 V	UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT		125 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X7		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	480 ns	UL RECOGNIZED
IXXH110N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		250 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				65 ns
IXGH42N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	223 W	250 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	120 ns	229 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	43 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.