31 A Insulated Gate Bipolar Transistors (IGBT) 66

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4BC30FD-SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

620 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

69 ns

IRG4PC30FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

640 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

36 ns

IRG4BC30FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

640 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRG4BC30FD1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

740 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

46 ns

IRG4BC30FDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

620 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

69 ns

MGP20N60U

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

455 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

99 ns

MGP21N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

558 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

90 ns

MGW21N60ED

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

558 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

90 ns

IRGMC40UDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IRGS15B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

22 ns

GULL WING

RECTANGULAR

1

36 ns

231 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

52 ns

IRGS15B60KDTRRP

Infineon Technologies

N-Channel

31 A

226 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

4000 ns

IRGMC40UD

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

IRGS15B60KTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

22 ns

GULL WING

RECTANGULAR

1

36 ns

231 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

52 ns

IRGS15B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

GULL WING

RECTANGULAR

1

36 ns

231 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e3

30

260

52 ns

IRGSL15B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

IN-LINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-262

e0

52 ns

IRGMC40UUPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IRGSL15B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

THROUGH-HOLE

RECTANGULAR

1

36 ns

231 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-262

e3

40

260

52 ns

IRGS15B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

231 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e0

30

225

52 ns

IRGS15B60KTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

22 ns

GULL WING

RECTANGULAR

1

36 ns

231 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

52 ns

IRGS15B60KDTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

231 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e3

52 ns

IRGMC40UU

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

IRGS15B60KDTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

231 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e3

52 ns

IRGAC40U

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

31 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

ULTRA FAST

TO-204AE

e0

SKW15N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

139 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

315 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

54 ns

SGB15N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

138 W

31 A

PLASTIC/EPOXY

POWER CONTROL

40 ns

GULL WING

RECTANGULAR

1

55 ns

315 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

54 ns

SKP15N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SGP15N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

138 W

31 A

PLASTIC/EPOXY

POWER CONTROL

40 ns

THROUGH-HOLE

RECTANGULAR

1

55 ns

315 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SGP15N60XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

54 ns

SGP15N60HKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

54 ns

SKB15N60XT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

315 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

54 ns

SKB15N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

139 W

31 A

PLASTIC/EPOXY

POWER CONTROL

28 ns

GULL WING

RECTANGULAR

1

65 ns

315 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

245

54 ns

SGW15N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

138 W

31 A

PLASTIC/EPOXY

POWER CONTROL

40 ns

THROUGH-HOLE

RECTANGULAR

1

55 ns

315 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

54 ns

SKP15N60HKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

54 ns

SIGC14T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

31 A

UNSPECIFIED

MOTOR CONTROL

40 ns

NO LEAD

SQUARE

1

55 ns

280 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

57 ns

SKB15N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

315 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

54 ns

SKP15N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

139 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

315 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SKB15N60E8151

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

315 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

54 ns

SKP15N60XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

54 ns

SKB15N60E8151ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

315 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

54 ns

SKB15N60E3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

315 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

54 ns

SP001549322

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

31 A

PLASTIC/EPOXY

1.8 V

GULL WING

RECTANGULAR

1

230 ns

390 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

580 ns

6 V

SINGLE

R-PSSO-G2

COLLECTOR

68 ns

SP001545780

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

31 A

PLASTIC/EPOXY

1.8 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

390 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

580 ns

6 V

SINGLE

R-PSFM-T3

TO-220AB

68 ns

SKW15N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

54 ns

SGP15N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SKW15N60XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

54 ns

SGB15N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

315 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SGW15N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

54 ns

IRGB15B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.