31 A Insulated Gate Bipolar Transistors (IGBT) 66

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4BC30FD-STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

230 ns

620 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

69 ns

IRG4PC30F-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-247AD

e3

36 ns

IRGB15B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

THROUGH-HOLE

RECTANGULAR

1

36 ns

231 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

IRG4BC30FD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

740 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

46 ns

IRG4PC30FDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

620 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING, ULTRA FAST SOFT RECOVERY

TO-247AC

e3

69 ns

IRG4BC30F

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRG4PC30F

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRG4BC30FD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

620 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

69 ns

IRG4BC30FD-STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

230 ns

620 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

69 ns

IRG4BC30FD-S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

620 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

69 ns

IRG4PC30FD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

620 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING, ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

69 ns

IRGPC30F-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

880 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e0

46 ns

IRGBC30FD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

FAST

TO-220AB

e3

MUBW25-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

31 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

330 ns

25

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

110 ns

UL RECOGNIZED

MUBW30-12A6

Littelfuse

N-CHANNEL

COMPLEX

NO

104 W

31 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

730 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

150 ns

VWI35-06P1

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

31 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

330 ns

19

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

VUB60-16NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

220 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

100 ns

UL RECOGNIZED

VUB60-12NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

220 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

100 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.