33 A Insulated Gate Bipolar Transistors (IGBT) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RGW60TK65GVC11

ROHM

N-CHANNEL

SINGLE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

209 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

50 ns

CPU165MKPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

33 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

2

10

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T10

ISOLATED

SHORT CIRCUIT RATED

NOT SPECIFIED

NOT SPECIFIED

CPU165MU

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

83 W

33 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

2

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T10

ISOLATED

Not Qualified

ULTRA FAST

e0

CPU165MUPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

2

10

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T10

ISOLATED

ULTRA FAST

NOT SPECIFIED

NOT SPECIFIED

CPU165MK

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

83 W

33 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

2

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T10

ISOLATED

Not Qualified

SHORT CIRCUIT RATED

e0

IRG4PH40SPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

20 ns

IRG7PH30K10PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

210 W

33 A

PLASTIC/EPOXY

POWER CONTROL

41 ns

THROUGH-HOLE

RECTANGULAR

1

56 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

7.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

35 ns

IRG4PH40S

Infineon Technologies

N-CHANNEL

SINGLE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

20 ns

IXBH40N140

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

33 A

PLASTIC/EPOXY

MOTOR CONTROL

150 ns

6 V

THROUGH-HOLE

RECTANGULAR

1

700 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1400 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS

TO-247AD

e3

10

260

260 ns

IXXQ30N60B3M

Littelfuse

N-CHANNEL

SINGLE

NO

90 W

33 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

SINGLE

R-PSFM-T3

ISOLATED

57 ns

IXBH40N160

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

33 A

PLASTIC/EPOXY

POWER CONTROL

7.1 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

1600 V

-55 Cel

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

260 ns

IXBJ40N140

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

33 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1400 V

20 V

8 V

MATTE TIN

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e3

260 ns

IXBJ40N160

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

33 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

20 V

8 V

MATTE TIN

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e3

260 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.