IXBH40N140 by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXBH40N140
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 33 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	IXBH40N140 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	33 A
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	150 ns
Transistor Application:	MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	310 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	300 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	260 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	300 W
Maximum Fall Time (tf):	700 ns
JEDEC-95 Code:	TO-247AD
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1400 V
Additional Features:	BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	6 V

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