Infineon Technologies - IRG7PH30K10PBF

IRG7PH30K10PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PH30K10PBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Collector Current (IC): 33 A; JEDEC-95 Code: TO-247AC;
Datasheet IRG7PH30K10PBF Datasheet
In Stock40
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 33 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 41 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN OVER NICKEL
Nominal Turn Off Time (toff): 400 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 210 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 35 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 56 ns
JEDEC-95 Code: TO-247AC
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 30 V
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