38 A Insulated Gate Bipolar Transistors (IGBT) 28

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXDR35N60BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		38 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		390 ns	3	IN-LINE		150 Cel	SILICON	600 V				TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH SPEED		e1			75 ns
IXGR32N170H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	500 ns	920 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V	5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-247AD				90 ns	UL RECOGNIZED
IXDH20N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	275 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		570 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES	TO-247AD	e3	10	260	175 ns
IXA20I1200PB	Littelfuse	N-CHANNEL	SINGLE	NO	165 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
IXBH14N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		1910 ns	3	FLANGE MOUNT		150 Cel	SILICON	3000 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247				810 ns
IXDH20N120	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		570 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES	TO-247AD	e3	10	260	175 ns
IXBT14N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		1910 ns	2	SMALL OUTLINE		150 Cel	SILICON	3000 V	-55 Cel	20 V	5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-268AA				810 ns
IXA20IF1200HB	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
MGY25N120	Onsemi	N-CHANNEL	SINGLE	NO	212 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		876 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	8 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-264AA	e0			214 ns
MGY25N120D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	212 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		876 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	8 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	ULTRAFAST, HIGH SPEED	TO-264AA	e0			214 ns
IRGAC40F	Infineon Technologies	N-CHANNEL	SINGLE	NO		38 A	METAL			PIN/PEG	ROUND	1			2	FLANGE MOUNT			SILICON	600 V					BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	FAST	TO-204AE		NOT SPECIFIED	NOT SPECIFIED
IKB20N65EH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1		199 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3			41 ns
IKB20N65EH5ATMA1	Infineon Technologies	N-Channel			125 W	38 A			2.1 V					187 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN			1					e3			28 ns
BSM25GAL120DN2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		38 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1		470 ns	7	FLANGE MOUNT			SILICON	1200 V					UPPER	R-XUFM-X7		ISOLATED	Not Qualified						140 ns
IKP28N65ES5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	38 A	PLASTIC/EPOXY	POWER CONTROL	1.9 V	THROUGH-HOLE	RECTANGULAR	1		236 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			54 ns
MUBW35-06A6	Littelfuse	N-CHANNEL	COMPLEX	NO	104 W	38 A	UNSPECIFIED	POWER CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	7		220 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified	FAST		e3			65 ns
IXXP12N65B4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	38 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1		245 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				44 ns
FID35-06C	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	38 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		390 ns	5	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			80 ns
IXGP28N60A3M	Littelfuse	N-CHANNEL	SINGLE	NO	64 W	38 A	PLASTIC/EPOXY	POWER CONTROL	1.4 V	THROUGH-HOLE	RECTANGULAR	1		870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		ISOLATED		LOW CONDUCTION LOSS	TO-220AB				46 ns
IXYA15N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		122 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	36 ns
FID36-06D	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		38 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		390 ns	5	IN-LINE		150 Cel	SILICON	600 V				TIN SILVER COPPER	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			80 ns
IXYP15N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		122 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				36 ns
IXBA14N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		1910 ns	2	SMALL OUTLINE		150 Cel	SILICON	3000 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	810 ns
IXBN42N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	313 W	38 A	PLASTIC/EPOXY	POWER CONTROL	6 V	UNSPECIFIED	RECTANGULAR	1		308 ns	4	FLANGE MOUNT		150 Cel	SILICON	1700 V	-55 Cel	20 V	5.5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					33 ns	UL RECOGNIZED
IXYP15N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		122 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				36 ns
IXA20I1200PZ	Littelfuse	N-CHANNEL	SINGLE	YES	165 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1		580 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		SINGLE	R-PDSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	78 ns
IXYH16N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	38 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		541 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				39 ns
IXYH16N250C	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	38 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		510 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				33 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.