43 A Insulated Gate Bipolar Transistors (IGBT) 15

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
HGTG11N120CND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		43 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			33 ns
MIXA30W1200TED	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	150 W	43 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X28	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXA27IF1200HJ	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	43 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		SINGLE	R-PSIP-T3	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
HGTG11N120CND_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	43 A	PLASTIC/EPOXY	MOTOR CONTROL	16 ns		THROUGH-HOLE	RECTANGULAR	1	400 ns	570 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				SINGLE	R-PSFM-T3		Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	33 ns
HGT1S11N120CNS	Onsemi	N-CHANNEL	SINGLE	YES	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	GULL WING	RECTANGULAR	1	400 ns	550 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSSO-G2	COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-263AB				33 ns
HGT1S11N120CNS9A	Onsemi	N-CHANNEL	SINGLE	YES	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	GULL WING	RECTANGULAR	1	400 ns	550 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSSO-G2	COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-263AB				33 ns
HGTP11N120CN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	43 A	PLASTIC/EPOXY	MOTOR CONTROL	16 ns	2.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	550 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	42 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSFM-T3	COLLECTOR		AVALANCHE RATED	TO-220AB				33 ns
HGTG11N120CN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	43 A	PLASTIC/EPOXY	POWER CONTROL	16 ns	2.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	550 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	680 ns			SINGLE	R-PSFM-T3	COLLECTOR		AVALANCHE RATED, LOW CONDUCTION LOSS	TO-247				33 ns
MUBW45-12T6K	Littelfuse	N-CHANNEL	COMPLEX	NO	160 W	43 A	UNSPECIFIED	POWER CONTROL		3.1 V	UNSPECIFIED	RECTANGULAR	7		610 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X21	ISOLATED	Not Qualified			e3			140 ns	UL RECOGNIZED
VUB71-16NO1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		43 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1		350 ns	8	FLANGE MOUNT		150 Cel	SILICON	1200 V						GOLD OVER NICKEL	UPPER	R-PUFM-X8	ISOLATED	Not Qualified			e4			300 ns	UL RECOGNIZED
IXA30PG1200DHGLB-TRR	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	150 W	43 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	2		350 ns	9	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			Nickel (39) Tin (984)	DUAL	R-PDSO-G9	ISOLATED		HIGH RELIABILITY					110 ns	UL RECOGNIZED
MWI45-12T6K	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		43 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	6		610 ns	13	FLANGE MOUNT		150 Cel	SILICON	1200 V							UPPER	R-XUFM-X13	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns	UL RECOGNIZED
VUB71-12NO1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		43 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1		350 ns	8	FLANGE MOUNT		150 Cel	SILICON	1200 V						GOLD OVER NICKEL	UPPER	R-PUFM-X8	ISOLATED	Not Qualified			e4			300 ns	UL RECOGNIZED
MIXA30WB1200TED	Littelfuse	N-CHANNEL	COMPLEX	NO	150 W	43 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X24	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
MIXA30W1200TML	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	150 W	43 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X24	ISOLATED							110 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.