500 A Insulated Gate Bipolar Transistors (IGBT) 35

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FS300R12KE3BOSA1	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		500 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	6		810 ns	29	FLANGE MOUNT			150 Cel	SILICON	1200 V					UPPER	R-XUFM-X29		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	400 ns
FS400R07A1E3S7BOMA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	6		540 ns	25	FLANGE MOUNT			150 Cel	SILICON	705 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X25	1	ISOLATED							220 ns
FF400R06KE3HOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		500 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT			175 Cel	SILICON	600 V					UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	190 ns
FS400R07A1E3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	6		580 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X23	1	ISOLATED	Not Qualified					260	200 ns
FS400R07A1E3_H5	Infineon Technologies	N-CHANNEL	COMPLEX	NO	750 W	500 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	6		580 ns	25	FLANGE MOUNT			150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X25	1	ISOLATED							200 ns
FS400R07A3E3BOMA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	6		430 ns	29	FLANGE MOUNT			150 Cel	SILICON	705 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X29	1	ISOLATED							200 ns
CM500HA-34A	Mitsubishi Electric	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	5000 W	500 A	UNSPECIFIED	POWER CONTROL		3 V	UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V			UPPER	R-XUFM-X3		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FF400R06KE3	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X7	1	ISOLATED	Not Qualified					260	190 ns
FF300R12ME3BOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		500 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	2		810 ns	11	FLANGE MOUNT			150 Cel	SILICON	1200 V					UPPER	R-XUFM-X11		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	400 ns
APTGLQ300SK120G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	500 A	UNSPECIFIED	MOTOR CONTROL		2.42 V	UNSPECIFIED	RECTANGULAR	1		414 ns	5	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V		UPPER	R-XUFM-X5		ISOLATED							79 ns
SKM400GB066D	Semikron International	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		500 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	2		613 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V		TIN/SILVER	UPPER	R-XUFM-X7		ISOLATED	Not Qualified			e3/e4	NOT SPECIFIED	NOT SPECIFIED	260 ns	UL RECOGNIZED
NVG500A75L4DSF2	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		500 A	UNSPECIFIED	POWER CONTROL		1.45 V	UNSPECIFIED	RECTANGULAR	2		913 ns	13	MICROELECTRONIC ASSEMBLY			175 Cel	SILICON	750 V	-40 Cel	20 V	6.5 V		UNSPECIFIED	R-XXMA-X13									235 ns	AEC-Q101
FS300R12KE3	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1450 W	500 A	UNSPECIFIED			2.1 V	UNSPECIFIED	RECTANGULAR	6		810 ns	29	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X29		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	400 ns
FF500R25KF1	Infineon Technologies				5200 W	500 A				3.5 V			1					Insulated Gate BIP Transistors		125 Cel		2500 V		20 V
FS400R07A1E3_S6	Infineon Technologies	N-Channel			1250 W	500 A				6.5 V					540 ns					3 Cel	SILICON	705 V	-40 Cel	20 V	6.5 V					ISOLATED							220 ns
FS400R07A1E3BOMA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	6		580 ns	23	FLANGE MOUNT			150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X23	1	ISOLATED							200 ns
FF300R12ME3	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1450 W	500 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	2		810 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X11		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	400 ns
FS400R07A1E3_S7	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	6		540 ns	25	FLANGE MOUNT			150 Cel	SILICON	705 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X25	1	ISOLATED							220 ns
FS400R07A3E3_H6	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	811 W	500 A	UNSPECIFIED	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	6		430 ns	29	FLANGE MOUNT			150 Cel	SILICON	705 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X29	1	ISOLATED							200 ns
FS400R06A1E3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	6		600 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X13		ISOLATED	Not Qualified						190 ns
FF400R06ME3	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		500 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		610 ns	10	FLANGE MOUNT			175 Cel	SILICON	600 V					UPPER	R-XUFM-X10		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	230 ns
FF400R06ME3BOMA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		500 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		610 ns	10	FLANGE MOUNT				SILICON	600 V					UPPER	R-XUFM-X10		ISOLATED							230 ns
FS400R07A3E3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC	NO	1250 W	500 A	UNSPECIFIED	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	6		430 ns	29	FLANGE MOUNT			150 Cel	SILICON	705 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X29	1	ISOLATED							200 ns
FS400R07A1E3BOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		500 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	6		580 ns	13	FLANGE MOUNT			175 Cel	SILICON	650 V					UPPER	R-XUFM-X13	1	ISOLATED	Not Qualified						200 ns
FS400R07A1E3H5BPSA1	Infineon Technologies	N-Channel			750 W	500 A				1.9 V					580 ns					150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V					ISOLATED							200 ns
MG500Q1US2	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		500 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X5			Not Qualified	HIGH SPEED
MG500Q1US21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		500 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X5			Not Qualified
MG500Q1US11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		500 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns		4	FLANGE MOUNT			150 Cel	SILICON	1200 V					UPPER	R-PUFM-X4			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MG500Q1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2400 W	500 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns	800 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	2900 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X4		ISOLATED	Not Qualified	HIGH SPEED					400 ns
MG12300WB-BN2MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		500 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		680 ns	11	FLANGE MOUNT			125 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X11		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	220 ns
TX168NA17A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		500 A	CERAMIC, METAL-SEALED COFIRED				NO LEAD	ROUND	1		610 ns	3	DISK BUTTON			125 Cel	SILICON	1700 V					END	O-CEDB-N3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	280 ns
IXGX320N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	1700 W	500 A	PLASTIC/EPOXY	POWER CONTROL		1.6 V	THROUGH-HOLE	RECTANGULAR	1		595 ns	3	IN-LINE			150 Cel	SILICON	600 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					107 ns
IXGK320N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	1700 W	500 A	PLASTIC/EPOXY	POWER CONTROL		1.6 V	THROUGH-HOLE	RECTANGULAR	1		595 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	107 ns
MWI300-17E9	Littelfuse	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	2200 W	500 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		610 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1700 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X17		ISOLATED	Not Qualified			e3			290 ns
T0500NB25E	Littelfuse	N-CHANNEL			2600 W	500 A												Insulated Gate BIP Transistors		125 Cel		2500 V		20 V	6.3 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.