Infineon Technologies - FF500R25KF1

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FF500R25KF1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF500R25KF1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 5200 W; Maximum Collector Current (IC): 500 A; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FF500R25KF1 Datasheet
In Stock368
NAME DESCRIPTION
Maximum Collector Current (IC): 500 A
Maximum Power Dissipation (Abs): 5200 W
Maximum Collector-Emitter Voltage: 2500 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.5 V
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