59 A Insulated Gate Bipolar Transistors (IGBT) 12

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
AUIRGB4062D1	Infineon Technologies	N-CHANNEL		NO	246 W	59 A			41 ns					40 ns				Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V								NOT SPECIFIED	NOT SPECIFIED
NXH75M65L4Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V	5.2 V		UPPER	R-XUFM-X27		ISOLATED					72 ns
NXH75M65L4Q1PTG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V	5.2 V	MATTE TIN	UPPER	R-XUFM-X27		ISOLATED		e3			72 ns
IKFW50N65DH5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	124 W	59 A	PLASTIC/EPOXY	POWER CONTROL		2.25 V	THROUGH-HOLE	RECTANGULAR	1		177 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		ISOLATED	TO-247	e3			57 ns
AUIRGS4062D1TRL	Infineon Technologies	N-CHANNEL		YES	246 W	59 A			41 ns					40 ns				Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V				1
AUIRGS4062D1TRR	Infineon Technologies	N-CHANNEL		YES	246 W	59 A			41 ns					40 ns				Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V				1
IKFW50N65EH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	124 W	59 A	PLASTIC/EPOXY			2.1 V	THROUGH-HOLE	RECTANGULAR	1		166 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		ISOLATED	TO-247	e3			43 ns
AUIRGS4062D1	Infineon Technologies	N-CHANNEL		YES	246 W	59 A			41 ns					40 ns				Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V				1
AUIRGSL4062D1	Infineon Technologies	N-CHANNEL		NO	246 W	59 A			41 ns					40 ns				Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V				1
GT30J341,Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	59 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		25 V			SINGLE	R-PSFM-T3		COLLECTOR					250 ns
GT30J341	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	59 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		25 V			SINGLE	R-PSFM-T3		COLLECTOR					250 ns
GT50J123	Toshiba	N-CHANNEL	SINGLE	NO	230 W	59 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		25 V			SINGLE	R-PSFM-T3		COLLECTOR			NOT SPECIFIED	NOT SPECIFIED	250 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.