67 A Insulated Gate Bipolar Transistors (IGBT) 8

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
NXH80T120L2Q0P2G	Onsemi	N-CHANNEL	COMPLEX	NO	158 W	67 A	UNSPECIFIED	POWER CONTROL	2.85 V	UNSPECIFIED	RECTANGULAR	4	293 ns	20	FLANGE MOUNT	150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X20	ISOLATED	RC-IGBT			NOT SPECIFIED	NOT SPECIFIED	88 ns
NXH80T120L2Q0S2G	Onsemi	N-CHANNEL	COMPLEX	NO	158 W	67 A	UNSPECIFIED	POWER CONTROL	2.85 V	UNSPECIFIED	RECTANGULAR	4	293 ns	20	FLANGE MOUNT	150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X20	ISOLATED	RC-IGBT			NOT SPECIFIED	NOT SPECIFIED	88 ns
SNXH80T120L2Q0P2G	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	158 W	67 A	UNSPECIFIED	POWER CONTROL	2.85 V	UNSPECIFIED	RECTANGULAR	4	293 ns	20	FLANGE MOUNT	150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X20	ISOLATED						88 ns
NXH80T120L2Q0S2TG	Onsemi	N-CHANNEL	COMPLEX	NO	158 W	67 A	UNSPECIFIED	POWER CONTROL	2.85 V	UNSPECIFIED	RECTANGULAR	4	293 ns	20	FLANGE MOUNT	150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X20	ISOLATED	RC-IGBT			NOT SPECIFIED	NOT SPECIFIED	88 ns
IGW40N60DTP	Infineon Technologies	N-Channel			246 W	67 A			1.8 V				320 ns			175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V										49 ns
IKW40N60DTPXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		67 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	320 ns	3	FLANGE MOUNT		SILICON	600 V	-40 Cel			TIN	SINGLE	R-PSFM-T3			TO-247	e3			49 ns
IGW40N60TPXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		67 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	320 ns	3	FLANGE MOUNT		SILICON	600 V	-40 Cel			TIN	SINGLE	R-PSFM-T3			TO-247	e3			49 ns
IKW40N60DTP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	246 W	67 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	3	FLANGE MOUNT	175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3			TO-247	e3			49 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.