SNXH80T120L2Q0P2G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	SNXH80T120L2Q0P2G
Description	N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Maximum Collector Current (IC): 67 A; Package Style (Meter): FLANGE MOUNT;
Datasheet	SNXH80T120L2Q0P2G Datasheet
In Stock	318

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	67 A
Configuration:	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	293 ns
No. of Terminals:	20
Maximum Power Dissipation (Abs):	158 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	88 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X20
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
318	$56.350	$17,919.300

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