820 A Insulated Gate Bipolar Transistors (IGBT) 5

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
FS820R08A6P2BBPSA1	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	714 W	820 A	UNSPECIFIED	POWER CONTROL	1.35 V	UNSPECIFIED	RECTANGULAR	6	1110 ns	33	FLANGE MOUNT	150 Cel	SILICON	750 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X33	ISOLATED		NOT SPECIFIED	NOT SPECIFIED	380 ns
NVH820S75L4SPC	Onsemi	N-CHANNEL	COMPLEX	NO		820 A	CERAMIC, METAL-SEALED COFIRED	POWER CONTROL	1.55 V	UNSPECIFIED	RECTANGULAR	6	1354 ns	21	FLANGE MOUNT	175 Cel	SILICON	750 V	-40 Cel	20 V	6.6 V	Matte Tin (Sn) - annealed	UPPER	R-CUFM-X21		e3			454 ns
NVH820S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	820 A	UNSPECIFIED	POWER CONTROL	1.55 V	UNSPECIFIED	RECTANGULAR	6	1354 ns	33	FLANGE MOUNT	175 Cel	SILICON	750 V	-40 Cel	20 V	6.6 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X33	ISOLATED	e3			454 ns
FS820R08A6P2B	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	714 W	820 A	UNSPECIFIED	POWER CONTROL	1.35 V	UNSPECIFIED	RECTANGULAR	6	1110 ns	33	FLANGE MOUNT	150 Cel	SILICON	750 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X33	ISOLATED		NOT SPECIFIED	NOT SPECIFIED	380 ns
FS820R08A6P2	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	714 W	820 A	UNSPECIFIED	POWER CONTROL	1.35 V	UNSPECIFIED	RECTANGULAR	6	1110 ns	33	FLANGE MOUNT	150 Cel	SILICON	750 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X33	ISOLATED		NOT SPECIFIED	NOT SPECIFIED	380 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.