Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
328.9 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
217 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
84 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
300 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
105 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
367 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
241 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
68 ns |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
300 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
7 V |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
300 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
6 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
106 ns |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
285 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
155 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
328.9 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
217 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
84 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
300 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
6 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
55 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
6 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
216 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
144 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
328.9 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
216 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
144 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
216 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
144 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
328.9 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
NOT SPECIFIED |
NOT SPECIFIED |
106 ns |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
382 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
330 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
39 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
428 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
270 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
89 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
350 W |
90 A |
UNSPECIFIED |
MOTOR CONTROL |
3 V |
PIN/PEG |
RECTANGULAR |
6 |
570 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-P17 |
ISOLATED |
Not Qualified |
e3 |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
280 W |
90 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
4 |
310 ns |
14 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
415 W |
90 A |
UNSPECIFIED |
POWER CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
570 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
415 W |
90 A |
UNSPECIFIED |
POWER CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
570 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
415 W |
90 A |
UNSPECIFIED |
MOTOR CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
570 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
90 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
310 ns |
14 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
237 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
81 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
577 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
303 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
95 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.