90 A Insulated Gate Bipolar Transistors (IGBT) 77

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKW75N65EH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

215 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

IXYH50N120C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

90 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

96 ns

IRG7PH42U-EP

Infineon Technologies

N-CHANNEL

NO

385 W

90 A

41 ns

86 ns

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

IRGP4263PBF

Infineon Technologies

N-CHANNEL

NO

300 W

90 A

80 ns

50 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

IRG7PH50K10D-EPBF

Infineon Technologies

N-CHANNEL

NO

400 W

90 A

80 ns

110 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

7.5 V

IRG7PH50K10DPBF

Infineon Technologies

N-CHANNEL

NO

400 W

90 A

80 ns

110 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

7.5 V

FGA90N30D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

219 W

90 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

30 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

240 ns

FGA90N30DTU

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

219 W

90 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

30 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

240 ns

STGP100N30

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

90 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

20 V

5.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IXYL60N450

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN RESISTOR

NO

417 W

90 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

1580 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

724 ns

STGE50NC60VD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

90 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

247 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

61 ns

IKZ75N65EH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

e3

37 ns

MWI75-06A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

90 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

310 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

100 ns

UL RECOGNIZED

MWI75-06A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

90 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

310 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

e3

100 ns

UL RECOGNIZED

MG90V2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1100 W

90 A

UNSPECIFIED

MOTOR CONTROL

4.5 V

UNSPECIFIED

RECTANGULAR

2

1500 ns

400 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

1100 W

150 Cel

SILICON

1700 V

20 V

8 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

100 ns

IKW75N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

232 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

61 ns

RJH60F7BDPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

216 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

144 ns

NGTB45N60SWG

Onsemi

N-CHANNEL

NO

250 W

90 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

MATTE TIN

e3

NGTB45N60S1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AD

e3

108 ns

NGTB45N60S2WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

232 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AD

e3

FGA90N33ATDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

60 ns

STGW45NC60VD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

366 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

46 ns

STGW45NC60WD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

285 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

46 ns

STGW100N30

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

90 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

20 V

5.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

IKZ75N65NH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

71 ns

F3L80R12W1H3B11BOMA1

Infineon Technologies

N-Channel

275 W

90 A

1.95 V

425 ns

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

210 ns

IKZ75N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

37 ns

F3L80R12W1H3_B11

Infineon Technologies

N-Channel

275 W

90 A

1.95 V

425 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

IKZ75N65NH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

e3

71 ns

BSM50GB120DL

Infineon Technologies

350 W

90 A

2.6 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

SP000054926

Infineon Technologies

N-CHANNEL

SINGLE

NO

333 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

328 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

55 ns

SP001257948

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

215 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

61 ns

SP000054922

Infineon Technologies

N-CHANNEL

SINGLE

YES

333 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

328 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

55 ns

SP001160046

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

37 ns

IRGP4263D-EPBF

Infineon Technologies

N-CHANNEL

NO

325 W

90 A

80 ns

50 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

IRGP4760DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

130 ns

IRGP4760D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

130 ns

IRG7PH42UPBF

Infineon Technologies

N-CHANNEL

NO

385 W

90 A

41 ns

86 ns

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

IRG4PC60FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

520 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AC

e3

105 ns

IRGP4263-EPBF

Infineon Technologies

N-CHANNEL

NO

300 W

90 A

80 ns

50 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

IRG4PC60F-PPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

e3

105 ns

IRGP4760PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

130 ns

FS50R12U1T4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

90 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

590 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X26

ISOLATED

95 ns

UL APPROVED

IRG4PC60F

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

105 ns

IRGP4760-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

130 ns

FS50R12U1T4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

90 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

590 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

IRGP4263DPBF

Infineon Technologies

N-CHANNEL

NO

325 W

90 A

80 ns

50 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

IRG4PC60F-P

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

105 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.