Infineon Technologies - IRG7PH42UPBF

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IRG7PH42UPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PH42UPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Rise Time (tr): 41 ns;
Datasheet IRG7PH42UPBF Datasheet
In Stock694
NAME DESCRIPTION
Maximum Collector Current (IC): 90 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Rise Time (tr): 41 ns
Maximum Gate-Emitter Threshold Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 385 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Fall Time (tf): 86 ns
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