Infineon Technologies - BSM50GB120DL

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BSM50GB120DL by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM50GB120DL
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 90 A; Maximum VCEsat: 2.6 V; No. of Elements: 1; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet BSM50GB120DL Datasheet
In Stock218
NAME DESCRIPTION
Maximum Collector Current (IC): 90 A
Maximum Power Dissipation (Abs): 350 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.6 V
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