Infineon Technologies - F3L80R12W1H3_B11

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F3L80R12W1H3_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number F3L80R12W1H3_B11
Description N-Channel; Maximum Power Dissipation (Abs): 275 W; Maximum Collector Current (IC): 90 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet F3L80R12W1H3_B11 Datasheet
In Stock799
NAME DESCRIPTION
Maximum Collector Current (IC): 90 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 425 ns
Maximum Power Dissipation (Abs): 275 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 210 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.95 V
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