Onsemi - NGTB45N60SWG

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NGTB45N60SWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB45N60SWG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet NGTB45N60SWG Datasheet
In Stock1,795
NAME DESCRIPTION
Maximum Collector Current (IC): 90 A
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
1,795 $3.190 $5,726.050

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