Toshiba - MG90V2YS50

  1. Home
  2. Toshiba - MG90V2YS50
MG90V2YS50 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MG90V2YS50
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 90 A; No. of Terminals: 7; Maximum Collector-Emitter Voltage: 1700 V;
Datasheet MG90V2YS50 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 90 A
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 7
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Additional Features: HIGH SPEED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IKD04N60RFAATMA1 by Infineon Technologies

IKD04N60RFAATMA1

Infineon Technologies

IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
FP40R12KT3BOSA1 by Infineon Technologies

FP40R12KT3BOSA1

Infineon Technologies

FP40R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 55A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
NVH680S75L4SPB by Onsemi

NVH680S75L4SPB

Onsemi

Insulated Gate Bipolar Transistors;
IRG7PH50K10DPBF by Infineon Technologies

IRG7PH50K10DPBF

Infineon Technologies

Infineon's IRG7PH50K10DPBF is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 400W power dissipation. Ideal for high-power applications requiring fast switching with tr of 80ns and tf of 110ns. Operates up to 150°C making it suitable for industrial motor drives and renewable energy systems.
CM150TX-24S1 by Mitsubishi Electric

CM150TX-24S1

Mitsubishi Electric

Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.
IRG4BC30FPBF by Infineon Technologies

IRG4BC30FPBF

Infineon Technologies

IRG4BC30FPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a power dissipation of 100W, turn-off time of 640ns, and fall time of 270ns. Ideal for power control applications due to its single configuration and flange mount package style.
FF450R12KE4HOSA1 by Infineon Technologies

FF450R12KE4HOSA1

Infineon Technologies

Infineon's FF450R12KE4HOSA1 IGBT features N-CHANNEL polarity, 2 elements with diode in series configuration. With VCEsat of 2.15V and IC of 520A, it suits high-power applications like motor drives and renewable energy systems. Operating at up to 150°C, it offers fast turn-off time (toff) of 800ns for efficient power control.
DF150R12RT4HOSA1 by Infineon Technologies

DF150R12RT4HOSA1

Infineon Technologies

DF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V. It has a turn on time of 185ns and turn off time of 490ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 175°C.
FF450R12IE4BOSA2 by Infineon Technologies

FF450R12IE4BOSA2

Infineon Technologies

FF450R12IE4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and operates at up to 175°C. Ideal for POWER CONTROL applications, it features a turn off time of 900ns and a turn on time of 360ns.
FGH40T120SMD_F155 by Fairchild Semiconductor

FGH40T120SMD_F155

Fairchild Semiconductor

FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.
IGW25N120H3FKSA1 by Infineon Technologies

IGW25N120H3FKSA1

Infineon Technologies

IGW25N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 397ns toff. Ideal for POWER CONTROL applications due to its fast ton of 61ns and high operating temp of 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
APT50GP60J by Microchip Technology

APT50GP60J

Microchip Technology

APT50GP60J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 150°C.
IRGP50B60PD1PBF by International Rectifier

IRGP50B60PD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 161 ns;
IRG7PH42UD1-EP by Infineon Technologies

IRG7PH42UD1-EP

Infineon Technologies

IRG7PH42UD1-EP by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 1200V. It has a max power dissipation of 313W and is designed for power control applications. The transistor has a rectangular package shape and a through-hole terminal form.
HGT1S10N120BNS by Fairchild Semiconductor

HGT1S10N120BNS

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Maximum Gate-Emitter Voltage: 20 V;
SKIIP13NAB065V1 by Semikron International

SKIIP13NAB065V1

Semikron International

Semikron International's SKIIP13NAB065V1 is an N-CHANNEL IGBT for POWER CONTROL applications. With 600V VCEsat, 24A IC, and 205ns toff, it offers efficient performance. The FLANGE MOUNT package with 24 terminals and UL RECOGNIZED standard makes it ideal for high-power systems.
CM900DU-24NF by Mitsubishi Electric

CM900DU-24NF

Mitsubishi Electric

Mitsubishi Electric's CM900DU-24NF is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.5V and can handle up to 900A collector current, making it ideal for high-power control applications. With a max power dissipation of 2550W and operating temperature of 150°C, it offers reliable performance in demanding environments.
STGD3HF60HDT4 by STMicroelectronics

STGD3HF60HDT4

STMicroelectronics

STGD3HF60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 38W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and small outline package style.
NGTB40N120FL3WG by Onsemi

NGTB40N120FL3WG

Onsemi

NGTB40N120FL3WG by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 326ns and a max operating temperature of 175°C.
FF450R12KT4PHOSA1 by Infineon Technologies

FF450R12KT4PHOSA1

Infineon Technologies

FF450R12KT4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. The transistor operates at temperatures as low as -40°C and comes in a RECTANGULAR package style with 7 terminals.