100 W Insulated Gate Bipolar Transistors (IGBT) 138

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGP10N90

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N80

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N80A

Littelfuse

N-CHANNEL

NO

100 W

220 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXBH9N140

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

9 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1400 V

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

260 ns

IXGM10N80A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N90A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXA20PT1200LB

Littelfuse

N-CHANNEL

YES

100 W

28 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

IXGP10N100

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGA12N100AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-263AB

e3

10

260

100 ns

IXGP12N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

22 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

1545 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

202 ns

IXGM10N50

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGM10N100A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGM10N60A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N50A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

FII30-06D

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

100 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

2

330 ns

5

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN SILVER COPPER

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

NOT SPECIFIED

NOT SPECIFIED

105 ns

IXBH9N160

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

9 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

-55 Cel

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

260 ns

MITB5WB200TMH

Littelfuse

100 W

29 A

2.2 V

2

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

IXGP10N50

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP10N100A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGM10N50A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGM10N90A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGM10N60

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGF20N250

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

355 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

524 ns

UL RECOGNIZED

IXGA12N100A

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

700 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

100 ns

IXGP12N100

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXGP12N100A

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXGA12N100

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

700 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

100 ns

IXGP12N100U1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1000 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXGP12N100AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXGA12N100U1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1000 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-263AB

e3

10

260

100 ns

MIXA20WB1200TML

Littelfuse

N-CHANNEL

COMPLEX

NO

100 W

28 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

IXGH12N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

22 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

1545 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

202 ns

IXGH12N90C

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

350 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

40 ns

IXGH12N100AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-247AD

e3

10

260

100 ns

MIXA20W1200TML

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

100 W

28 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

110 ns

UL RECOGNIZED

IXGH12N100U1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-247AD

e3

10

260

100 ns

MIXA20W1200MC

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 W

28 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

IXGH10N50U1

Littelfuse

N-CHANNEL

NO

100 W

10 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

5 V

Tin/Lead (Sn/Pb)

e0

MMIX4B12N300

Littelfuse

N-CHANNEL

COMPLEX

YES

100 W

22 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

GULL WING

RECTANGULAR

4

705 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

20 V

DUAL

R-PDSO-G9

ISOLATED

460 ns

IXGH10N300

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

18 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

684 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

299 ns

IXGH12N100

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

300 ns

IXGH12N100A

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1850 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

e3

10

260

300 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.