Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
620 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
69 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 W |
28 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
120 ns |
370 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
28 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
120 ns |
370 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
30 |
260 |
100 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
22 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
84 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
140 ns |
637 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
121 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
270 ns |
640 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
36 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
130 ns |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
62 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
150 ns |
320 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SWITCHING |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
33 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
100 W |
12 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
5.7 V |
TIN |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
590 ns |
1550 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
40 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
130 ns |
171 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
270 ns |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
61 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
100 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
190 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
67 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
150 ns |
320 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
33 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
270 ns |
640 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
36 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
100 ns |
300 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
30 |
260 |
41 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
740 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
46 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
28 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
620 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
590 ns |
1550 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
40 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
320 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Matte Tin (Sn) - with Nickel (Ni) barrier |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
33 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
320 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
33 ns |
|||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
320 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Matte Tin (Sn) - with Nickel (Ni) barrier |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
33 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
3.1 V |
GULL WING |
RECTANGULAR |
4 |
1066 ns |
9 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
2500 V |
20 V |
DUAL |
R-PDSO-G9 |
ISOLATED |
217 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
149 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
17 ns |
AEC-Q101 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
9 A |
PLASTIC/EPOXY |
POWER CONTROL |
7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
340 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
100 W |
22 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
1545 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
202 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
100 W |
22 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
355 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3000 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
e1 |
524 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Motorola |
N-CHANNEL |
SINGLE |
NO |
100 W |
20 A |
METAL |
MOTOR CONTROL |
150 ns |
PIN/PEG |
ROUND |
1 |
8000 ns |
12000 ns |
2 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
500 V |
20 V |
4 V |
TIN LEAD |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
TO-204AA |
e0 |
225 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
100 W |
28 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
SWITCHING |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
150 ns |
130 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
280 ns |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
42 ns |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
40 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
190 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
67 ns |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-220AB |
55 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
TO-220AB |
55 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
320 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
TO-220AB |
e3 |
55 ns |
||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
100 W |
7 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7 A |
1300 ns |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
500 V |
TIN LEAD |
7 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
800 ns |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
100 W |
10 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
1300 ns |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
500 V |
TIN LEAD |
10 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
800 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
295 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
51 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
NO |
100 W |
20 A |
150 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
20 V |
4 V |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
100 W |
14 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
8000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e3 |
30 |
245 |
5400 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
100 W |
14 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
8000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e3 |
5400 ns |
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STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
100 W |
24 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
295 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
51 ns |
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|
Infineon Technologies |
100 W |
25 A |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
21 A |
PLASTIC/EPOXY |
POWER CONTROL |
30 ns |
2 V |
GULL WING |
RECTANGULAR |
1 |
30 ns |
120 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
80 ns |
-40 Cel |
30 V |
150 ns |
7.4 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
50 ns |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
335 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
TO-251 |
NOT SPECIFIED |
NOT SPECIFIED |
22 ns |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
149 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
17 ns |
AEC-Q101 |
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|
Infineon Technologies |
N-Channel |
100 W |
30 A |
1.9 V |
202 ns |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
1 |
50 ns |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
22 ns |
AEC-Q101 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.