STMicroelectronics - STGP10N50A

  1. Home
  2. STMicroelectronics - STGP10N50A
STGP10N50A by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGP10N50A
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 500 V; Maximum Gate-Emitter Threshold Voltage: 4 V;
Datasheet STGP10N50A Datasheet
In Stock1,998
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Power Dissipation (Abs): 100 W
Maximum Collector-Emitter Voltage: 500 V
Maximum Rise Time (tr): 150 ns
Maximum Gate-Emitter Threshold Voltage: 4 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,998 - -

Popular Products

Category Top Products

F475R12KS4B11BOSA1 by Infineon Technologies

F475R12KS4B11BOSA1

Infineon Technologies

F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
VS-GT100DA120UF by Vishay Intertechnology

VS-GT100DA120UF

Vishay Intertechnology

VS-GT100DA120UF by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 187A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 490ns turn off time, and 208ns turn on time. UL approved and designed in a rectangular package style for flange mount.
CM900DU-24NF by Mitsubishi Electric

CM900DU-24NF

Mitsubishi Electric

Mitsubishi Electric's CM900DU-24NF is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.5V and can handle up to 900A collector current, making it ideal for high-power control applications. With a max power dissipation of 2550W and operating temperature of 150°C, it offers reliable performance in demanding environments.
SGL160N60UFDTU by Onsemi

SGL160N60UFDTU

Onsemi

SGL160N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 160A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 262ns.
IRG7PH50K10DPBF by International Rectifier

IRG7PH50K10DPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 110 ns; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
IRG4PC30FPBF by Infineon Technologies

IRG4PC30FPBF

Infineon Technologies

IRG4PC30FPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a turn-off time of 640ns, turn-on time of 36ns, and can dissipate up to 100W power. Ideal for power control applications due to its single configuration and flange mount package style.
AUIRG4BC30SSTRL by International Rectifier

AUIRG4BC30SSTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;
IRG4BC30U-SPBF by International Rectifier

IRG4BC30U-SPBF

International Rectifier

IRG4BC30U-SPBF by International Rectifier is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 23A max collector current. It has a power dissipation of 100W, turn-off time of 320ns, and operates at up to 150°C. Ideal for power control applications requiring fast switching speeds in surface-mount configurations.
SKM145GB066D by Semikron International

SKM145GB066D

Semikron International

Semikron International's SKM145GB066D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle up to 195A of Collector Current. Ideal for POWER CONTROL applications, this IGBT operates at a max temperature of 175°C with a fast Turn Off Time of 536ns.
STGD5NB120SZT4 by STMicroelectronics

STGD5NB120SZT4

STMicroelectronics

STGD5NB120SZT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 10A max collector current, and 55W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and resistor. It comes in a small outline package shape suitable for surface mount assembly.
FF200R12KS4HOSA1 by Infineon Technologies

FF200R12KS4HOSA1

Infineon Technologies

FF200R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 275A, and turn off time of 590ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
APT50GP60J by Advanced Power Technology

APT50GP60J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED; Nominal Turn Off Time (toff): 202 ns;
IKW40N120T2FKSA1 by Infineon Technologies

IKW40N120T2FKSA1

Infineon Technologies

IKW40N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 75A IC, and 600ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures reliability in high-temp environments up to 175°C.
IXGH24N170 by IXYS Corporation

IXGH24N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1700 V;
STGD25N40LZAG by STMicroelectronics

STGD25N40LZAG

STMicroelectronics

STGD25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 435V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.
FF400R12KE3HOSA1 by Infineon Technologies

FF400R12KE3HOSA1

Infineon Technologies

FF400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 760 ns turn off time, and a max voltage of 1200 V. It is commonly used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its high current rating of 580 A and fast turn on/off times.
FGH40N60SMD-F085 by Onsemi

FGH40N60SMD-F085

Onsemi

FGH40N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max power dissipation of 349W. Ideal for power control applications, it features a single configuration with built-in diode and operates at temperatures up to 175°C.
FGH40T65SPD_F155 by Onsemi

FGH40T65SPD_F155

Onsemi

FGH40T65SPD_F155 by Onsemi is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 267W Ptot. Ideal for power control applications, it features a built-in diode, 56ns toff, and operates up to 175°C.
IRFS7434TRL7PP by International Rectifier

IRFS7434TRL7PP

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 245 W; Maximum Drain Current (ID): 240 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FGH40N60SMDF by Fairchild Semiconductor

FGH40N60SMDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;