1100 W Insulated Gate Bipolar Transistors (IGBT) 21

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
2MBI150NC-120	Fuji Electric	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT	NO	1100 W	150 A	UNSPECIFIED	POWER CONTROL		3.3 V	UNSPECIFIED	RECTANGULAR	2		850 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors			SILICON	1200 V		20 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified				650 ns
MG90V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	90 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1700 V		20 V	8 V	UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED	100 ns
FD200R12PT4_B6	Infineon Technologies	N-CHANNEL	PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1100 W	300 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	3		553 ns	20	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V	UPPER	R-XUFM-X20		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	251 ns	UL APPROVED
FS225R12KE4	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1100 W	320 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	6		600 ns	29	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		UPPER	R-XUFM-X29		ISOLATED	Not Qualified		NOT SPECIFIED	NOT SPECIFIED	220 ns
DF200R12PT4B6BOSA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	1100 W	300 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	3		407 ns	20	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V	UPPER	R-XUFM-X20		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	225 ns	UL RECOGNIZED
DF200R12PT4_B6	Infineon Technologies	N-CHANNEL	COMPLEX	NO	1100 W	300 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	3		407 ns	20	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V	UPPER	R-XUFM-X20		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	225 ns	UL RECOGNIZED
FS225R12KE3	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1100 W	325 A	UNSPECIFIED			2.1 V	UNSPECIFIED	RECTANGULAR	6		810 ns	29	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		UPPER	R-XUFM-X29		ISOLATED	Not Qualified		NOT SPECIFIED	NOT SPECIFIED	400 ns
2A200HB12C2F	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	294 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	2		480 ns	7	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V	UPPER	R-XUFM-X7		ISOLATED					180 ns
FF300R07ME4_B11	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1100 W	300 A	UNSPECIFIED	POWER CONTROL		1.95 V	UNSPECIFIED	RECTANGULAR	2		525 ns	11	FLANGE MOUNT			150 Cel	SILICON	650 V	-40 Cel	20 V	6.4 V	UPPER	R-XUFM-X11		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	138 ns
FF200R12KE4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	240 A	UNSPECIFIED	POWER CONTROL		2.15 V	UNSPECIFIED	RECTANGULAR	2		800 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V		20 V		UPPER	R-XUFM-X5		ISOLATED	Not Qualified		NOT SPECIFIED	NOT SPECIFIED	325 ns
FF300R07ME4B11BOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1100 W	390 A	UNSPECIFIED	POWER CONTROL		1.95 V	UNSPECIFIED	RECTANGULAR	2		525 ns	11	FLANGE MOUNT			150 Cel	SILICON	650 V	-40 Cel	20 V	6.4 V	UPPER	R-XUFM-X11		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	138 ns	UL APPROVED
FF200R12KT4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	320 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	2		700 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified		NOT SPECIFIED	NOT SPECIFIED	680 ns
FF150R17KE4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	250 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	2		930 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1700 V		20 V		UPPER	R-XUFM-X5	1	ISOLATED	Not Qualified			260	355 ns
FF300R07ME4P_B11	Infineon Technologies	N-Channel			1100 W	390 A				1.95 V					525 ns					150 Cel	SILICON	650 V	-40 Cel	20 V	6.4 V				ISOLATED					138 ns
MG150Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1100 W	150 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1200 V		20 V	6 V	UPPER	R-XUFM-X5		ISOLATED	Not Qualified	HIGH SPEED
MG150Q1JS44	Toshiba				1100 W	150 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
MG150Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1200 V		20 V	6 V	UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED
MG150Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		UPPER	R-PUFM-X7			Not Qualified
MIXA225PF1200TSF	Littelfuse				1100 W	360 A				2.1 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
MIXA225RF1200TSF	Littelfuse				1100 W	360 A				2.1 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
MIXA225W1200TFH	Littelfuse				1100 W	360 A				2.1 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.