Infineon Technologies - FF200R12KT4

  1. Home
  2. Infineon Technologies - FF200R12KT4
FF200R12KT4 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FF200R12KT4
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 320 A; Maximum VCEsat: 2.15 V;
Datasheet FF200R12KT4 Datasheet
In Stock454
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 320 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 700 ns
No. of Terminals: 7
Maximum Power Dissipation (Abs): 1100 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 680 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.15 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
454 $52.510 $23,839.540

Popular Products

Category Top Products

SKM100GB12T4G by Semikron International

SKM100GB12T4G

Semikron International

SKM100GB12T4G by Semikron is an N-CHANNEL IGBT with 2 elements, built-in diode, VCEsat of 2.1V, and max current of 150A. Ideal for power control applications with a max VCE of 1200V and operating temp up to 175°C. Package style is flange mount with isolated case connection.
IKW75N60TAFKSA1 by Infineon Technologies

IKW75N60TAFKSA1

Infineon Technologies

IKW75N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, meeting AEC-Q101 standards.
FGD3040G2_F085 by Fairchild Semiconductor

FGD3040G2_F085

Fairchild Semiconductor

Fairchild Semiconductor's FGD3040G2_F085 is an N-CHANNEL IGBT with 23.2A IC, 390V VCE, and 150W Pd. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package suitable for surface mount assembly.
HGTG18N120BND by Fairchild Semiconductor

HGTG18N120BND

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 54 A; JESD-30 Code: R-PSFM-T3;
F475R12KS4B11BOSA1 by Infineon Technologies

F475R12KS4B11BOSA1

Infineon Technologies

F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
IXGH100N30C3 by Littelfuse

IXGH100N30C3

Littelfuse

IXGH100N30C3 by Littelfuse is an N-CHANNEL IGBT with 300V VCE, 75A IC, and 460W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.85V and fast turn-off time of 244ns. Package style is FLANGE MOUNT with a max operating temp of 150°C.
NXH50C120L2C2ES1G by Onsemi

NXH50C120L2C2ES1G

Onsemi

NXH50C120L2C2ES1G by Onsemi is an IGBT transistor with 6 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 50A of collector current. Ideal for power control applications, it operates b/w -40°C to 150°C temperature range.
IRG4BC20UDPBF by International Rectifier

IRG4BC20UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; JEDEC-95 Code: TO-220AB;
6PS18012E4FG35689NWSA1 by Infineon Technologies

6PS18012E4FG35689NWSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FGP10N60UNDF by Fairchild Semiconductor

FGP10N60UNDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 139 W; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-PSFM-T3;
IKW50N60DTPXKSA1 by Infineon Technologies

IKW50N60DTPXKSA1

Infineon Technologies

IKW50N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 332ns. The transistor operates in temperatures as low as -40°C, making it suitable for various industrial uses.
FF450R12KT4F by Infineon Technologies

FF450R12KT4F

Infineon Technologies

Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
FB30R06W1E3ENG by Infineon Technologies

FB30R06W1E3ENG

Infineon Technologies

Infineon's FB30R06W1E3ENG IGBT features 600V VCE, 39A IC, and 115W power dissipation. Ideal for high-power applications like motor drives due to its fast turn-off time of 245ns and low VCEsat of 2V. With an operating temperature range from -40°C to 150°C, it ensures reliable performance in various environments.
FGH40N60SMDF by Fairchild Semiconductor

FGH40N60SMDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
STGD5NB120SZT4 by STMicroelectronics

STGD5NB120SZT4

STMicroelectronics

STGD5NB120SZT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 10A max collector current, and 55W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and resistor. It comes in a small outline package shape suitable for surface mount assembly.
FGD5T120SH by Onsemi

FGD5T120SH

Onsemi

FGD5T120SH by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 3.6V and a collector-emitter voltage of 1200V. Ideal for general purpose switching applications, it has a turn-off time of 159.6ns and can handle a max collector current of 10A.
SKM100GB125DN by Semikron International

SKM100GB125DN

Semikron International

SKM100GB125DN by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 100A, and toff of 380ns. Ideal for POWER CONTROL applications, it operates up to 1200V at 150°C with UL RECOGNIZED standards compliance.
IXGN50N120C3H1 by IXYS Corporation

IXGN50N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Collector Current (IC): 95 A; Nominal Turn Off Time (toff): 485 ns;
FF900R12IE4BOSA1 by Infineon Technologies

FF900R12IE4BOSA1

Infineon Technologies

FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
FGL60N100BNTDTU by Fairchild Semiconductor

FGL60N100BNTDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;