12500 W Insulated Gate Bipolar Transistors (IGBT) 11

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

CM900HG-130X

Mitsubishi Electric

N-CHANNEL

COMPLEX

NO

12500 W

900 A

PLASTIC/EPOXY

POWER CONTROL

500 ns

3.8 V

UNSPECIFIED

RECTANGULAR

3

1500 ns

6400 ns

9

FLANGE MOUNT

150 Cel

SILICON

6500 V

1950 ns

-50 Cel

20 V

12000 ns

7.5 V

UPPER

R-PUFM-X9

ISOLATED

HIGH RELIABILITY

IEC-60747; UL RECOGNIZED

FZ2400R12HP4

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

12500 W

3460 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

1440 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

880 ns

FZ2400R17KE3

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

12500 W

3200 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

1890 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

850 ns

FD1200R17KF6C-B2

Infineon Technologies

12500 W

2600 A

3.1 V

3

Insulated Gate BIP Transistors

150 Cel

1700 V

20 V

FZ1600R17KF6CB2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

12500 W

2600 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

2

1360 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

490 ns

FZ1600R17KF6B2

Infineon Technologies

12500 W

1600 A

3.1 V

2

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

FZ1600R17KF6CB2NOSA1

Infineon Technologies

N-Channel

12500 W

2600 A

3.1 V

1360 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

490 ns

FD1600R17KF6C-B2

Infineon Technologies

12500 W

2600 A

3.1 V

3

Insulated Gate BIP Transistors

150 Cel

1700 V

20 V

FZ1800R17KE3_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

12500 W

2850 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

900 ns

ST2000GXH31

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12500 W

2000 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

ROUND

1

13000 ns

4

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

HIGH RELIABILITY

1400 ns

T1200EB45E

Littelfuse

N-CHANNEL

12500 W

1200 A

Insulated Gate BIP Transistors

125 Cel

4500 V

20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.